| Surface Termination Dependent Work Function and Electronic Properties of Ti3C2Tx MXene T Schultz, NC Frey, K Hantanasirisakul, S Park, SJ May, VB Shenoy, ... Chemistry of Materials 31 (17), 6590-6597, 2019 | 474 | 2019 |
| Direct determination of monolayer MoS 2 and WSe 2 exciton binding energies on insulating and metallic substrates S Park, N Mutz, T Schultz, S Blumstengel, A Han, A Aljarb, LJ Li, ... 2D Materials 5 (2), 025003, 2018 | 190 | 2018 |
| Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality M Kneiß, A Hassa, D Splith, C Sturm, H Von Wenckstern, T Schultz, ... APL Materials 7 (2), 2019 | 125 | 2019 |
| Growth of Nb-Doped Monolayer WS2 by Liquid-Phase Precursor Mixing Z Qin, L Loh, J Wang, X Xu, Q Zhang, B Haas, C Alvarez, H Okuno, ... ACS nano 13 (9), 10768-10775, 2019 | 121 | 2019 |
| Surface state density determines the energy level alignment at hybrid perovskite/electron acceptors interfaces F Zu, P Amsalem, M Ralaiarisoa, T Schultz, R Schlesinger, N Koch ACS applied materials & interfaces 9 (47), 41546-41552, 2017 | 114 | 2017 |
| Electronic properties of a 1D intrinsic/p-doped heterojunction in a 2D transition metal dichalcogenide semiconductor Z Song, T Schultz, Z Ding, B Lei, C Han, P Amsalem, T Lin, D Chi, ... ACS nano 11 (9), 9128-9135, 2017 | 79 | 2017 |
| Reliable work function determination of multicomponent surfaces and interfaces: the role of electrostatic potentials in ultraviolet photoelectron spectroscopy T Schultz, T Lenz, N Kotadiya, G Heimel, G Glasser, R Berger, PWM Blom, ... Advanced Materials Interfaces 4 (19), 1700324, 2017 | 75 | 2017 |
| Demonstration of the key substrate-dependent charge transfer mechanisms between monolayer MoS2 and molecular dopants S Park, T Schultz, X Xu, B Wegner, A Aljarb, A Han, LJ Li, VC Tung, ... Communications Physics 2 (1), 109, 2019 | 67 | 2019 |
| Tuning the work function of GaN with organic molecular acceptors T Schultz, R Schlesinger, J Niederhausen, F Henneberger, S Sadofev, ... Physical Review B 93 (12), 125309, 2016 | 61 | 2016 |
| Excited-State Charge Transfer Enabling MoS2/Phthalocyanine Photodetectors with Extended Spectral Sensitivity N Mutz, S Park, T Schultz, S Sadofev, S Dalgleish, L Reissig, N Koch, ... The Journal of Physical Chemistry C 124 (5), 2837-2843, 2020 | 49 | 2020 |
| The optical signatures of molecular-doping induced polarons in poly (3-hexylthiophene-2, 5-diyl): individual polymer chains versus aggregates AE Mansour, D Lungwitz, T Schultz, M Arvind, AM Valencia, C Cocchi, ... Journal of Materials Chemistry C 8 (8), 2870-2879, 2020 | 45 | 2020 |
| The Schottky–Mott rule expanded for two-dimensional semiconductors: Influence of substrate dielectric screening S Park, T Schultz, D Shin, N Mutz, A Aljarb, HS Kang, CH Lee, LJ Li, X Xu, ... ACS nano 15 (9), 14794-14803, 2021 | 42 | 2021 |
| Thermally‐Activated Gold‐Mediated TMDC Exfoliation and A Unique Gold‐Mediated Transfer M Heyl, D Burmeister, T Schultz, S Pallasch, G Ligorio, N Koch, ... physica status solidi (RRL)–Rapid Research Letters, 2020 | 40 | 2020 |
| Influence of oxygen deficiency on the rectifying behavior of transparent-semiconducting-oxide–metal interfaces T Schultz, S Vogt, P Schlupp, H von Wenckstern, N Koch, M Grundmann Physical Review Applied 9 (6), 064001, 2018 | 39 | 2018 |
| Modulation of the work function by the atomic structure of strong organic electron acceptors on H‐Si (111) H Wang, SV Levchenko, T Schultz, N Koch, M Scheffler, M Rossi Advanced Electronic Materials 5 (5), 1800891, 2019 | 36 | 2019 |
| Epitaxial κ-(AlxGa1− x) 2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD P Storm, M Kneiß, A Hassa, T Schultz, D Splith, H Von Wenckstern, ... APL Materials 7 (11), 2019 | 35 | 2019 |
| Solubility limit and material properties of a κ-(AlxGa1− x) 2O3 thin film with a lateral cation gradient on (00.1) Al2O3 by tin-assisted PLD A Hassa, C Sturm, M Kneiß, D Splith, H Von Wenckstern, T Schultz, ... APL Materials 8 (2), 2020 | 32 | 2020 |
| A multifunctional interlayer for solution processed high performance indium oxide transistors A Kyndiah, A Ablat, S Guyot-Reeb, T Schultz, F Zu, N Koch, P Amsalem, ... Scientific Reports 8 (1), 10946, 2018 | 30 | 2018 |
| Type‐I Energy Level Alignment at the PTCDA—Monolayer MoS2 Interface Promotes Resonance Energy Transfer and Luminescence Enhancement S Park, N Mutz, SA Kovalenko, T Schultz, D Shin, A Aljarb, LJ Li, V Tung, ... Advanced Science 8 (12), 2100215, 2021 | 29 | 2021 |
| Impact of surface states and bulk doping level on hybrid inorganic/organic semiconductor interface energy levels T Schultz, J Niederhausen, R Schlesinger, S Sadofev, N Koch Journal of Applied Physics 123 (24), 2018 | 28 | 2018 |
Norbert KochInstitut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin and Helmholtz-Zentrum BerlinVerified email at physik.hu-berlin.de
