| Horizontal current bipolar transistor with a single polysilicon region for improved high-frequency performance of BiCMOS ICs T Suligoj, M Koričić, H Mochizuki, S Morita, K Shinomura, H Imai IEEE Electron Device Letters 31 (6), 534-536, 2010 | 44 | 2010 |
| Double-emitter reduced-surface-field horizontal current bipolar transistor with 36 V breakdown integrated in BiCMOS at zero cost M Koričić, J Žilak, T Suligoj IEEE Electron Device Letters 36 (2), 90-92, 2014 | 25 | 2014 |
| 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) R Vrana | 23 | 2018 |
| Collector region design and optimization in horizontal current bipolar transistor (HCBT) T Suligoj, M Koričić, H Mochizuki, S Morita, K Shinomura, H Imai 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 212-215, 2010 | 21 | 2010 |
| Fabrication of horizontal current bipolar transistor (HCBT) T Suligoj, M Koricic, P Biljanovic, KL Wang IEEE transactions on electron devices 50 (7), 1645-1651, 2003 | 18 | 2003 |
| Double-emitter HCBT structure—A high-voltage bipolar transistor for BiCMOS integration M Koricic, T Suligoj, H Mochizuki, S Morita, K Shinomura, H Imai IEEE transactions on electron devices 59 (12), 3647-3650, 2012 | 16 | 2012 |
| Hybrid-integrated lateral bipolar transistor and CMOS transistor and method for manufacturing the same T Suligoj, M Koricic, H Mochizuki, S Morita US Patent 8,569,866, 2013 | 14 | 2013 |
| Horizontal current bipolar transistor (HCBT) for the low-cost BiCMOS technology T Suligoj, M Koricic, H Mochizuki, S Morita, K Shinomura, H Imai 2009 Proceedings of the European Solid State Device Research Conference, 359-362, 2009 | 13 | 2009 |
| Impact of emitter interface treatment on the horizontal current bipolar transistor (HCBT) characteristics and RF circuit performance J Žilak, M Koričić, T Suligoj, H Mochizuki, S Morita 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 31-34, 2015 | 11 | 2015 |
| Optimization of Horizontal Current Bipolar Transistor (HCBT) technology parameters for linearity in RF mixer T Suligoj, M Koričić, J Žilak, H Mochizuki, S Morita, K Shinomura, H Imai 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 13-16, 2013 | 9 | 2013 |
| Examination of novel high-voltage double-emitter horizontal current bipolar transistor (HCBT) M Koričić, T Suligoj, H Mochizuki, S Morita, K Shinomura, H Imai 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 5-8, 2011 | 9 | 2011 |
| Noise figure characterization of horizontal current bipolar transistor (HCBT) J Žilak, M Koričić, Ž Osrečki, M Šimić, T Suligoj 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018 | 8 | 2018 |
| Analysis of horizontal current bipolar transistor (HCBT) characteristics for RF power amplifiers Ž Osrečki, J Žilak, M Koričić, T Suligoj 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 7 | 2019 |
| A low-cost 180 nm BiCMOS technology with Horizontal Current Bipolar Transistor (HCBT) for wireless communication ICs J Žilak, M Koričić, T Suligoj, H Mochizuki, S Morita 2016 11th European Microwave Integrated Circuits Conference (EuMIC), 373-376, 2016 | 7 | 2016 |
| Horizontal current bipolar transistor (HCBT) technology for high linearity RF mixers J Žilak, M Koričić, Ž Osrečki, T Suligoj IEEE transactions on electron devices 67 (4), 1511-1516, 2020 | 6 | 2020 |
| Large-signal characterization of horizontal current bipolar transistor (HCBT) by load-pull measurements Ž Osrečki, J Zilak, M Koričić, T Suligoj 2018 41st International Convention on Information and Communication …, 2018 | 6 | 2018 |
| A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration M Koričić, J Žilak, T Suligoj IEEE transactions on electron devices 64 (7), 3019-3022, 2017 | 6 | 2017 |
| Reliability degradation mechanisms of horizontal current bipolar transistor J Žilak, M Koričić, T Suligoj IEEE transactions on electron devices 63 (11), 4409-4415, 2016 | 5 | 2016 |
| Examination of horizontal current bipolar transistor (HCBT) reliability characteristics J Žilak, M Koričić, H Mochizuki, S Morita, K Shinomura, H Imai, T Suligoj 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 37-40, 2014 | 4 | 2014 |
| Examination of Horizontal Current Bipolar Transistor (HCBT) with double and single polysilicon region T Suligoj, M Koričić, H Mochizuki, S Morita, K Shinomura, H Imai 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 1-4, 2012 | 4 | 2012 |
