Prati
Neophytos Neophytou
Neophytos Neophytou
School of Engineering, University of Warwick
Potvrđena adresa e-pošte na warwick.ac.uk - Početna stranica
Naslov
Citirano
Citirano
Godina
Thermoelectrics: From history, a window to the future
D Beretta, N Neophytou, JM Hodges, MG Kanatzidis, D Narducci, ...
Materials Science and Engineering: R: Reports 138, 100501, 2019
3122019
Performance projections for ballistic graphene nanoribbon field-effect transistors
G Liang, N Neophytou, DE Nikonov, MS Lundstrom
IEEE Transactions on Electron Devices 54 (4), 677-682, 2007
2922007
Bandstructure effects in silicon nanowire electron transport
N Neophytou, A Paul, MS Lundstrom, G Klimeck
IEEE Transactions on Electron Devices 55 (6), 1286-1297, 2008
2072008
Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation
G Liang, N Neophytou, MS Lundstrom, DE Nikonov
Journal of Applied Physics 102 (5), 054307, 2007
1522007
Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si
N Neophytou, X Zianni, H Kosina, S Frabboni, B Lorenzi, D Narducci
Nanotechnology 24 (20), 205402, 2013
1472013
Atomistic simulations of low-field mobility in Si nanowires: Influence of confinement and orientation
N Neophytou, H Kosina
Physical Review B 84 (8), 085313, 2011
1102011
Engineering enhanced thermoelectric properties in zigzag graphene nanoribbons
H Karamitaheri, N Neophytou, M Pourfath, R Faez, H Kosina
Journal of Applied Physics 111 (5), 054501, 2012
1022012
Ultra-low thermal conductivities in large-area Si-Ge nanomeshes for thermoelectric applications
JA Perez-Taborda, M Muñoz Rojo, J Maiz, N Neophytou, ...
Scientific reports 6 (1), 1-10, 2016
892016
Contact effects in graphene nanoribbon transistors
G Liang, N Neophytou, MS Lundstrom, DE Nikonov
Nano letters 8 (7), 1819-1824, 2008
882008
On the Lorenz number of multiband materials
M Thesberg, H Kosina, N Neophytou
Physical Review B 95 (12), 125206, 2017
852017
Effects of confinement and orientation on the thermoelectric power factor of silicon nanowires
N Neophytou, H Kosina
Physical Review B 83 (24), 245305, 2011
812011
Band-structure effects on the performance of III–V ultrathin-body SOI MOSFETs
Y Liu, N Neophytou, G Klimeck, MS Lundstrom
IEEE transactions on electron devices 55 (5), 1116-1122, 2008
712008
A tight-binding study of the ballistic injection velocity for ultrathin-body SOI MOSFETs
Y Liu, N Neophytou, T Low, G Klimeck, MS Lundstrom
IEEE transactions on electron devices 55 (3), 866-871, 2008
702008
Bandstructure effects in silicon nanowire hole transport
N Neophytou, A Paul, G Klimeck
IEEE transactions on nanotechnology 7 (6), 710-719, 2008
632008
Performance analysis of 60-nm gate-length III–V InGaAs HEMTs: Simulations versus experiments
N Neophytou, T Rakshit, MS Lundstrom
IEEE Transactions on Electron Devices 56 (7), 1377-1387, 2009
582009
Influence of defects on nanotube transistor performance
N Neophytou, D Kienle, E Polizzi, MP Anantram
Applied Physics Letters 88 (24), 242106, 2006
582006
Optimizing thermoelectric power factor by means of a potential barrier
N Neophytou, H Kosina
Journal of Applied Physics 114 (4), 044315, 2013
532013
Thermal conductivity of silicon nanomeshes: Effects of porosity and roughness
S Wolf, N Neophytou, H Kosina
Journal of Applied Physics 115 (20), 204306, 2014
482014
Large enhancement in hole velocity and mobility in p-type [110] and [111] silicon nanowires by cross section scaling: an atomistic analysis
N Neophytou, H Kosina
Nano letters 10 (12), 4913-4919, 2010
432010
Modulation doping and energy filtering as effective ways to improve the thermoelectric power factor
N Neophytou, M Thesberg
Journal of Computational Electronics 15, 16-26, 2016
422016
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