| Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy PT Webster, NA Riordan, S Liu, EH Steenbergen, RA Synowicki, ... Journal of Applied Physics 118 (24), 245706, 2015 | 79 | 2015 |
| Invited Article: A test-facility for large-area microchannel plate detector assemblies using a pulsed sub-picosecond laser B Adams, M Chollet, A Elagin, E Oberla, A Vostrikov, M Wetstein, R Obaid, ... Review of Scientific Instruments 84 (6), 061301, 2013 | 39 | 2013 |
| Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices PT Webster, AJ Shalindar, NA Riordan, C Gogineni, H Liang, AR Sharma, ... Journal of Applied Physics 119 (22), 225701, 2016 | 34 | 2016 |
| Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry PT Webster, NA Riordan, S Liu, EH Steenbergen, RA Synowicki, ... Applied Physics Letters 106 (6), 061907, 2015 | 32 | 2015 |
| Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices PT Webster, NA Riordan, C Gogineni, S Liu, J Lu, XH Zhao, DJ Smith, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014 | 32 | 2014 |
| Investigation of MBE-grown InAs1− xBix alloys and Bi-mediated type-II superlattices by transmission electron microscopy J Lu, PT Webster, S Liu, YH Zhang, SR Johnson, DJ Smith Journal of Crystal Growth 425, 250-254, 2015 | 23 | 2015 |
| Measurement of InAsBi mole fraction and InBi lattice constant using Rutherford backscattering spectrometry and X-ray diffraction AJ Shalindar, PT Webster, BJ Wilkens, TL Alford, SR Johnson Journal of applied Physics 120 (14), 145704, 2016 | 20 | 2016 |
| Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material LK Casias, CP Morath, EH Steenbergen, GA Umana-Membreno, ... Applied Physics Letters 116 (18), 182109, 2020 | 19 | 2020 |
| A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy H Li, S Liu, OO Cellek, D Ding, XM Shen, EH Steenbergen, J Fan, Z Lin, ... Journal of crystal growth 378, 145-149, 2013 | 17 | 2013 |
| Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy PT Webster, AJ Shalindar, ST Schaefer, SR Johnson Applied Physics Letters 111 (8), 082104, 2017 | 15 | 2017 |
| Molecular beam epitaxy growth and optical properties of InAsSbBi ST Schaefer, RR Kosireddy, PT Webster, SR Johnson Journal of Applied Physics 126 (8), 083101, 2019 | 11 | 2019 |
| Systems-Level Characterization of Microchannel Plate Detector Assemblies, Using a Pulsed sub-Picosecond Laser MJ Wetstein, B Adams, M Chollet, P Webster, Z Insepov, V Ivanov, ... Physics Procedia 37, 748-756, 2012 | 9 | 2012 |
| Absorption edge characteristics of GaAs, GaSb, InAs, and InSb ST Schaefer, S Gao, PT Webster, RR Kosireddy, SR Johnson Journal of Applied Physics 127 (16), 165705, 2020 | 8 | 2020 |
| Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications LK Casias, CP Morath, EH Steenbergen, PT Webster, JK Kim, VM Cowan, ... Infrared Physics & Technology 96, 184-191, 2019 | 8 | 2019 |
| Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices RA Carrasco, CP Morath, PC Grant, G Ariyawansa, CA Stephenson, ... Journal of Applied Physics 129 (18), 184501, 2021 | 7 | 2021 |
| 1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications CM Campbell, Y Zhao, E Suarez, M Boccard, XH Zhao, ZY He, ... 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 0411-0414, 2016 | 6 | 2016 |
| InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications OO Cellek, H Li, XM Shen, Z Lin, EH Steenbergen, D Ding, S Liu, ... Infrared Technology and Applications XXXVIII 8353, 1173-1178, 2012 | 6 | 2012 |
| Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi P Petluru, PC Grant, AJ Muhowski, IM Obermeier, MS Milosavljevic, ... Applied Physics Letters 117 (6), 061103, 2020 | 4 | 2020 |
| Examination of the structural quality of InAsSbBi epilayers using cross section transmission electron microscopy RR Kosireddy, ST Schaefer, AJ Shalindar, PT Webster, SR Johnson Microscopy and Microanalysis 24 (S1), 36-37, 2018 | 4 | 2018 |
| Optical quality in strain-balanced InAs/InAsSb superlattices grown with and without Bi surfactant PT Webster, ST Schaefer, EH Steenbergen, SR Johnson Quantum Sensing and Nano Electronics and Photonics XV 10540, 173-179, 2018 | 4 | 2018 |
