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Cheng-Ying Huang
Cheng-Ying Huang
Verified email at intel.com
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Year
Re-growing source/drain regions from un-relaxed silicon layer
CH Wann, CH Ko, YT Huang, CY Huang
US Patent 8,609,518, 2013
1602013
300mm heterogeneous 3D integration of record performance layer transfer germanium PMOS with silicon NMOS for low power high performance logic applications
W Rachmady, A Agrawal, SH Sung, G Dewey, S Chouksey, B Chu-Kung, ...
2019 IEEE International Electron Devices Meeting (IEDM), 29.7. 1-29.7. 4, 2019
1192019
3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact …
HW Then, S Dasgupta, M Radosavljevic, P Agababov, I Ban, R Bristol, ...
2019 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 2019
1102019
Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities
V Chobpattana, J Son, JJM Law, R Engel-Herbert, CY Huang, S Stemmer
Applied Physics Letters 102 (2), 022907, 2013
982013
Record Ion(0.50 mA/µm at VDD= 0.5 V and Ioff= 100 nA/µm) 25 nm-gate-length ZrO2/InAs/InAlAs MOSFETs
S Lee, V Chobpattana, CY Huang, BJ Thibeault, W Mitchell, S Stemmer, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
602014
High performance raised source/drain InAs/In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer
S Lee, CY Huang, D Cohen-Elias, JJM Law, V Chobpattanna, S Krämer, ...
Applied Physics Letters 103 (23), 233503, 2013
542013
Highly scalable raised source/drain InAs quantum well MOSFETs exhibiting ION= 482 μA/μm at IOFF= 100 nA/μm and VDD= 0.5 V
S Lee, CY Huang, D Cohen-Elias, BJ Thibeault, W Mitchell, ...
IEEE Electron Device Lett 35 (6), 621-623, 2014
382014
Low Power III–V InGaAs MOSFETs featuring InP recessed source/drain spacers with Ion=120 µA/µm at Ioff=1 nA/µm and VDS=0.5 V
CY Huang, S Lee, V Chobpattana, S Stemmer, AC Gossard, B Thibeault, ...
2014 IEEE International Electron Devices Meeting, 25.4. 1-25.4. 4, 2014
282014
3-D self-aligned stacked NMOS-on-PMOS nanoribbon transistors for continued Moore’s law scaling
CY Huang, G Dewey, E Mannebach, A Phan, P Morrow, W Rachmady, ...
2020 IEEE International Electron Devices Meeting (IEDM), 20.6. 1-20.6. 4, 2020
272020
Record extrinsic transconductance (2.45 mS/µm at VDS= 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth
S Lee, CY Huang, AD Carter, DC Elias, JJM Law, V Chobpattana, ...
2013 Symposium on VLSI Technology, T246-T247, 2013
242013
Ultrathin InAs-channel MOSFETs on Si substrates
CY Huang, X Bao, Z Ye, S Lee, H Chiang, H Li, V Chobpattana, ...
2015 International Symposium on VLSI Technology, Systems and Applications, 1-2, 2015
152015
Record-performance In (Ga) As MOSFETS targeting ITRS high-performance and low-power logic
MJ Rodwell, CY Huang, S Lee, V Chobpattana, B Thibeault, W Mitchell, ...
ECS Transactions 66 (4), 135, 2015
132015
Co-doping of InxGa1− xAs with silicon and tellurium for improved ultra-low contact resistance
JJM Law, AD Carter, S Lee, CY Huang, H Lu, MJW Rodwell, AC Gossard
Journal of crystal growth 378, 92-95, 2013
132013
12 nm-gate-length ultrathin-body InGaAs/InAs MOSFETs with 8.3•105ION/IOFF
CY Huang, P Choudhary, S Lee, S Kraemer, V Chobpattana, B Thibeault, ...
2015 73rd Annual Device Research Conference (DRC), 260-260, 2015
122015
Nanometer InP electron devices for VLSI and THz applications
MJW Rodwell, S Lee, CY Huang, D Elias, V Chobpattanna, J Rode, ...
72nd Device Research Conference, 215-216, 2014
122014
High transconductance surface channel In0.53Ga0.47As MOSFETs using MBE source-drain regrowth and surface digital etching
S Lee, CY Huang, AD Carter, JJM Law, DC Elias, V Chobpattana, ...
2013 International Conference on Indium Phosphide and Related Materials …, 2013
122013
Reduction of leakage current in In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors using AlAs0.56Sb0.44 confinement layers
CY Huang, S Lee, D Cohen-Elias, JJM Law, AD Carter, V Chobpattana, ...
Applied Physics Letters 103 (20), 203502, 2013
112013
Formation of sub-10 nm width InGaAs finFETs of 200 nm height by atomic layer epitaxy
D Cohen-Elias, JJM Law, HW Chiang, A Sivananthan, C Zhang, ...
71st Device Research Conference, 1-2, 2013
82013
III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications
CY Huang
University of California, Santa Barbara, 2015
62015
Two dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells
CY Huang, JJM Law, H Lu, D Jena, MJW Rodwell, AC Gossard
Journal of Applied Physics 115 (12), 123711, 2014
62014
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