| Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs H Zhang, L Yuan, X Tang, J Hu, J Sun, Y Zhang, Y Zhang, R Jia IEEE Transactions on Power Electronics 35 (5), 5157-5179, 2019 | 138 | 2019 |
| Self-powered photodetectors based on β-Ga2O3/4H–SiC heterojunction with ultrahigh current on/off ratio and fast response J Yu, L Dong, B Peng, L Yuan, Y Huang, L Zhang, Y Zhang, R Jia Journal of Alloys and Compounds 821, 153532, 2020 | 121 | 2020 |
| Influence of annealing temperature on structure and photoelectrical performance of β-Ga2O3/4H-SiC heterojunction photodetectors J Yu, Z Nie, L Dong, L Yuan, D Li, Y Huang, L Zhang, Y Zhang, R Jia Journal of Alloys and Compounds 798, 458-466, 2019 | 89 | 2019 |
| Improved photoresponse performance of self-powered β-Ga₂O₃/NiO heterojunction UV photodetector by surface plasmonic effect of Pt nanoparticles J Yu, M Yu, Z Wang, L Yuan, Y Huang, L Zhang, Y Zhang, R Jia IEEE Transactions on Electron Devices 67 (8), 3199-3204, 2020 | 82 | 2020 |
| High-performance photodetector based on sol–gel epitaxially grown α/β Ga2O3 thin films M Yu, C Lv, J Yu, Y Shen, L Yuan, J Hu, S Zhang, H Cheng, Y Zhang, ... Materials Today Communications 25, 101532, 2020 | 56 | 2020 |
| Surface modification of β-Ga2O3 layer using pt nanoparticles for improved deep UV photodetector performance J Yu, J Lou, Z Wang, S Ji, J Chen, M Yu, B Peng, Y Hu, L Yuan, Y Zhang, ... Journal of Alloys and Compounds 872, 159508, 2021 | 47 | 2021 |
| Leakage current conduction mechanisms and electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors H Zhang, R Jia, Y Lei, X Tang, Y Zhang, Y Zhang Journal of Physics D: Applied Physics 51 (7), 075104, 2018 | 43 | 2018 |
| Energy-band alignment of (HfO2) x (Al2O3) 1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201) L Yuan, H Zhang, R Jia, L Guo, Y Zhang, Y Zhang Applied Surface Science 433, 530-534, 2018 | 29 | 2018 |
| Analysis of electronic structure and properties of Ga2O3/CuAlO2 heterojunction M Yu, H Wang, W Wei, B Peng, L Yuan, J Hu, Y Zhang, R Jia Applied Surface Science 568, 150826, 2021 | 22 | 2021 |
| Trench multiple floating limiting rings termination for 4H-SiC high-voltage devices H Yuan, Q Song, X Tang, L Yuan, S Yang, G Tang, Y Zhang, Y Zhang IEEE Electron Device Letters 37 (8), 1037-1040, 2016 | 21 | 2016 |
| Stress-induced charge trapping and electrical properties of atomic-layer-deposited HfAlO/Ga2O3 metal–oxide–semiconductor capacitors H Zhang, L Yuan, R Jia, X Tang, J Hu, Y Zhang, Y Zhang, J Sun Journal of Physics D: Applied Physics 52 (21), 215104, 2019 | 20 | 2019 |
| A state-of-art review on gallium oxide field-effect transistors R Qiao, H Zhang, S Zhao, L Yuan, R Jia, B Peng, Y Zhang Journal of Physics D: Applied Physics 55 (38), 383003, 2022 | 19 | 2022 |
| Impact of high-temperature storage stressing (HTSS) on degradation of high-voltage 4H-SiC junction barrier Schottky diodes S Yang, Y Zhang, Q Song, X Tang, Y Zhang, L Yuan, Y Zhang IEEE Transactions on Power Electronics 33 (3), 1874-1877, 2017 | 16 | 2017 |
| Influence of Metal Gate Electrodes on Electrical Properties of Atomic-Layer-Deposited Al-Rich HfAlO/Ga2O3 MOSCAPs H Zhang, L Yuan, X Tang, J Hu, J Sun, Y Zhang, Y Zhang, R Jia IEEE Transactions on Electron Devices 67 (4), 1730-1736, 2020 | 13 | 2020 |
| Analytical Model and Structure of the Multilayer Enhancement-Mode β-Ga2O3 Planar MOSFETs L Guo, S Luan, H Zhang, L Yuan, Y Zhang, R Jia IEEE Transactions on Electron Devices 69 (2), 682-689, 2021 | 11 | 2021 |
| Ferromagnetism observed in silicon-carbide-derived carbon B Peng, Y Zhang, Y Wang, H Guo, L Yuan, R Jia Physical Review B 97 (5), 054401, 2018 | 11 | 2018 |
| Fabrication and characterization of 4H—SiC bipolar junction transistor with double base epilayer Q Zhang, YM Zhang, L Yuan, YM Zhang, XY Tang, QW Song Chinese Physics B 21 (8), 088502, 2012 | 11 | 2012 |
| Fast-response self-powered solar-blind photodetector based on Pt/β-Ga2O3 Schottky barrier diodes B Peng, L Yuan, H Zhang, H Cheng, S Zhang, Y Zhang, Y Zhang, R Jia Optik 245, 167715, 2021 | 8 | 2021 |
| Reverse-bias stress-induced electrical parameters instability in 4H-SiC JBS diodes terminated nonequidistance FLRs Q Song, H Yuan, Q Sun, C Han, X Tang, Y Zhang, L Yuan, S Yang, ... IEEE Transactions on Electron Devices 66 (9), 3935-3939, 2019 | 8 | 2019 |
| High-performance layer-structured Si/Ga2O3/CH3NH3PbI3 heterojunction photodetector based on a Ga2O3 buffer interlayer G Wang, T Pang, K Sun, S Luan, Y Zhang, L Yuan, R Jia Applied Optics 62 (6), A76-A82, 2023 | 6 | 2023 |
