Observation of two-dimensional electron gas in a Si quantum well with mobility of TM Lu, DC Tsui, CH Lee, CW Liu Applied Physics Letters 94 (18), 182102, 2009 | 75 | 2009 |
Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry TM Lu, NC Bishop, T Pluym, J Means, PG Kotula, J Cederberg, LA Tracy, ... Applied Physics Letters 99 (4), 043101, 2011 | 39 | 2011 |
Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures SH Huang, TM Lu, SC Lu, CH Lee, CW Liu, DC Tsui Applied Physics Letters 101, 042111, 2012 | 36 | 2012 |
Valley splitting of Si∕ Si_ {1− x} Ge_ {x} heterostructures in tilted magnetic fields K Lai, TM Lu, W Pan, DC Tsui, S Lyon, J Liu, YH Xie, M Mühlberger, ... Physical Review B 73 (16), 161301, 2006 | 34 | 2006 |
Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors TM Lu, CH Lee, SH Huang, DC Tsui, CW Liu Applied Physics Letters 99 (15), 153510, 2011 | 33 | 2011 |
Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors TM Lu, W Pan, DC Tsui, CH Lee, CW Liu Physical Review B 85 (12), 121307, 2012 | 30 | 2012 |
Cyclotron mass of two-dimensional holes in (100) oriented heterostructures TM Lu, ZF Li, DC Tsui, MJ Manfra, LN Pfeiffer, KW West Applied Physics Letters 92 (1), 012109, 2008 | 30 | 2008 |
Atomic precision advanced manufacturing for digital electronics DR Ward, SW Schmucker, EM Anderson, E Bussmann, L Tracy, TM Lu, ... arXiv preprint arXiv:2002.11003, 2020 | 29 | 2020 |
Single and double hole quantum dots in strained Ge/SiGe quantum wells WJ Hardy, CT Harris, YH Su, Y Chuang, J Moussa, LN Maurer, JY Li, ... Nanotechnology 30 (21), 215202, 2019 | 28 | 2019 |
Capacitively induced high mobility two-dimensional electron gas in undoped heterostructures with atomic-layer-deposited dielectric TM Lu, J Liu, J Kim, K Lai, DC Tsui, YH Xie Applied physics letters 90 (18), 182114, 2007 | 27 | 2007 |
Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure D Laroche, SH Huang, Y Chuang, JY Li, CW Liu, TM Lu Applied Physics Letters 108 (23), 233504, 2016 | 26 | 2016 |
Electron spin lifetime of a single antimony donor in silicon LA Tracy, TM Lu, NC Bishop, GA Ten Eyck, T Pluym, JR Wendt, MP Lilly, ... Applied Physics Letters 103 (14), 143115, 2013 | 26 | 2013 |
All-optical lithography process for contacting nanometer precision donor devices DR Ward, MT Marshall, DM Campbell, TM Lu, JC Koepke, ... Applied Physics Letters 111 (19), 193101, 2017 | 25 | 2017 |
Designing nanomagnet arrays for topological nanowires in silicon LN Maurer, JK Gamble, L Tracy, S Eley, TM Lu Physical Review Applied 10 (5), 054071, 2018 | 24 | 2018 |
Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures YH Su, Y Chuang, CY Liu, JY Li, TM Lu Physical Review Materials 1 (4), 044601, 2017 | 24 | 2017 |
Scattering mechanisms in shallow undoped Si/SiGe quantum wells D Laroche, SH Huang, E Nielsen, Y Chuang, JY Li, CW Liu, TM Lu AIP Advances 5 (10), 107106, 2015 | 22 | 2015 |
In-plane field magnetoresistivity of Si two-dimensional electron gas in Si/SiGe quantum wells at 20 mK TM Lu, L Sun, DC Tsui, S Lyon, W Pan, M Mühlberger, F Schäffler, J Liu, ... Physical Review B 78 (23), 233309, 2008 | 21 | 2008 |
Undoped high mobility two-dimensional hole-channel heterostructure field-effect transistors with atomic-layer-deposited dielectric TM Lu, DR Luhman, K Lai, DC Tsui, LN Pfeiffer, KW West Applied Physics Letters 90 (11), 112113, 2007 | 17 | 2007 |
Effective g factor of low-density two-dimensional holes in a Ge quantum well TM Lu, CT Harris, SH Huang, Y Chuang, JY Li, CW Liu Applied Physics Letters 111 (10), 102108, 2017 | 15 | 2017 |
Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime CT Chou, NT Jacobson, JE Moussa, AD Baczewski, Y Chuang, CY Liu, ... Nanoscale 10 (44), 20559-20564, 2018 | 11 | 2018 |