Tzu-Ming Lu
Tzu-Ming Lu
Potvrđena adresa e-pošte na
Observation of two-dimensional electron gas in a Si quantum well with mobility of
TM Lu, DC Tsui, CH Lee, CW Liu
Applied Physics Letters 94 (18), 182102, 2009
Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry
TM Lu, NC Bishop, T Pluym, J Means, PG Kotula, J Cederberg, LA Tracy, ...
Applied Physics Letters 99 (4), 043101, 2011
Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures
SH Huang, TM Lu, SC Lu, CH Lee, CW Liu, DC Tsui
Applied Physics Letters 101, 042111, 2012
Valley splitting of Si∕ Si_ {1− x} Ge_ {x} heterostructures in tilted magnetic fields
K Lai, TM Lu, W Pan, DC Tsui, S Lyon, J Liu, YH Xie, M Mühlberger, ...
Physical Review B 73 (16), 161301, 2006
Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors
TM Lu, CH Lee, SH Huang, DC Tsui, CW Liu
Applied Physics Letters 99 (15), 153510, 2011
Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors
TM Lu, W Pan, DC Tsui, CH Lee, CW Liu
Physical Review B 85 (12), 121307, 2012
Cyclotron mass of two-dimensional holes in (100) oriented heterostructures
TM Lu, ZF Li, DC Tsui, MJ Manfra, LN Pfeiffer, KW West
Applied Physics Letters 92 (1), 012109, 2008
Atomic precision advanced manufacturing for digital electronics
DR Ward, SW Schmucker, EM Anderson, E Bussmann, L Tracy, TM Lu, ...
arXiv preprint arXiv:2002.11003, 2020
Single and double hole quantum dots in strained Ge/SiGe quantum wells
WJ Hardy, CT Harris, YH Su, Y Chuang, J Moussa, LN Maurer, JY Li, ...
Nanotechnology 30 (21), 215202, 2019
Capacitively induced high mobility two-dimensional electron gas in undoped heterostructures with atomic-layer-deposited dielectric
TM Lu, J Liu, J Kim, K Lai, DC Tsui, YH Xie
Applied physics letters 90 (18), 182114, 2007
Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure
D Laroche, SH Huang, Y Chuang, JY Li, CW Liu, TM Lu
Applied Physics Letters 108 (23), 233504, 2016
Electron spin lifetime of a single antimony donor in silicon
LA Tracy, TM Lu, NC Bishop, GA Ten Eyck, T Pluym, JR Wendt, MP Lilly, ...
Applied Physics Letters 103 (14), 143115, 2013
All-optical lithography process for contacting nanometer precision donor devices
DR Ward, MT Marshall, DM Campbell, TM Lu, JC Koepke, ...
Applied Physics Letters 111 (19), 193101, 2017
Designing nanomagnet arrays for topological nanowires in silicon
LN Maurer, JK Gamble, L Tracy, S Eley, TM Lu
Physical Review Applied 10 (5), 054071, 2018
Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures
YH Su, Y Chuang, CY Liu, JY Li, TM Lu
Physical Review Materials 1 (4), 044601, 2017
Scattering mechanisms in shallow undoped Si/SiGe quantum wells
D Laroche, SH Huang, E Nielsen, Y Chuang, JY Li, CW Liu, TM Lu
AIP Advances 5 (10), 107106, 2015
In-plane field magnetoresistivity of Si two-dimensional electron gas in Si/SiGe quantum wells at 20 mK
TM Lu, L Sun, DC Tsui, S Lyon, W Pan, M Mühlberger, F Schäffler, J Liu, ...
Physical Review B 78 (23), 233309, 2008
Undoped high mobility two-dimensional hole-channel heterostructure field-effect transistors with atomic-layer-deposited dielectric
TM Lu, DR Luhman, K Lai, DC Tsui, LN Pfeiffer, KW West
Applied Physics Letters 90 (11), 112113, 2007
Effective g factor of low-density two-dimensional holes in a Ge quantum well
TM Lu, CT Harris, SH Huang, Y Chuang, JY Li, CW Liu
Applied Physics Letters 111 (10), 102108, 2017
Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime
CT Chou, NT Jacobson, JE Moussa, AD Baczewski, Y Chuang, CY Liu, ...
Nanoscale 10 (44), 20559-20564, 2018
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