Conal Murray
Conal Murray
Research Staff Member, IBM T.J. Watson Research Center
Verified email at
Cited by
Cited by
High-mobility ultrathin semiconducting films prepared by spin coating
DB Mitzi, LL Kosbar, CE Murray, M Copel, A Afzali
Nature 428 (6980), 299-303, 2004
Stress in thin films and coatings: Current status, challenges, and prospects
G Abadias, E Chason, J Keckes, M Sebastiani, GB Thompson, E Barthel, ...
Journal of Vacuum Science & Technology A 36 (2), 2018
Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources
Z Zhang, F Pagette, C D'emic, B Yang, C Lavoie, Y Zhu, M Hopstaken, ...
IEEE Electron Device Letters 31 (7), 731-733, 2010
Liner materials for direct electrodeposition of Cu
MW Lane, CE Murray, FR McFeely, PM Vereecken, R Rosenberg
Applied physics letters 83 (12), 2330-2332, 2003
Low-energy proton-induced single-event-upsets in 65 nm node, silicon-on-insulator, latches and memory cells
KP Rodbell, DF Heidel, HHK Tang, MS Gordon, P Oldiges, CE Murray
IEEE Transactions on Nuclear Science 54 (6), 2474-2479, 2007
High-resolution three-dimensional structural microscopy by single-angle Bragg ptychography
SO Hruszkewycz, M Allain, MV Holt, CE Murray, JR Holt, PH Fuoss, ...
Nature materials 16 (2), 244-251, 2017
Solution-processed metal chalcogenide films for p-type transistors
DJ Milliron, DB Mitzi, M Copel, CE Murray
Chemistry of materials 18 (3), 587-590, 2006
Investigating surface loss effects in superconducting transmon qubits
JM Gambetta, CE Murray, YKK Fung, DT McClure, O Dial, W Shanks, ...
IEEE Transactions on Applied Superconductivity 27 (1), 1-5, 2016
Quantitative nanoscale imaging of lattice distortions in epitaxial semiconductor heterostructures using nanofocused X-ray Bragg projection ptychography
SO Hruszkewycz, MV Holt, CE Murray, J Bruley, J Holt, A Tripathi, ...
Nano letters 12 (10), 5148-5154, 2012
Varying capacitance voltage contrast structures to determine defect resistance
C Lavoie, CE Murray, OD Patterson, RL Wisnieff
US Patent 7,927,895, 2011
High‐mobility p‐type transistor based on a spin‐coated metal telluride semiconductor
DB Mitzi, M Copel, CE Murray
Advanced Materials 18 (18), 2448-2452, 2006
p-FET with a strained nanowire channel and embedded SiGe source and drain stressors
G Cohen, CE Murray, MJ Rooks
US Patent 8,399,314, 2013
The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics
JR Lloyd, CE Murray, S Ponoth, S Cohen, E Liniger
Microelectronics Reliability 46 (9-11), 1643-1647, 2006
32 and 45 nm radiation-hardened-by-design (RHBD) SOI latches
KP Rodbell, DF Heidel, JA Pellish, PW Marshall, HHK Tang, CE Murray, ...
IEEE Transactions on Nuclear Science 58 (6), 2702-2710, 2011
Process for preparing electronics structures using a sacrificial multilayer hardmask scheme
ME Colburn, RA Donaton, CE Murray, SV Nitta, S Purushothaman, ...
US Patent 7,371,684, 2008
Elastic strain relaxation in free-standing SiGe/Si structures
PM Mooney, GM Cohen, JO Chu, CE Murray
Applied Physics Letters 84 (7), 1093-1095, 2004
High-resolution strain mapping in heteroepitaxial thin-film features
CE Murray, HF Yan, IC Noyan, Z Cai, B Lai
Journal of applied physics 98 (1), 2005
Process of forming copper structures
M Lane, FR McFeely, C Murray, R Rosenberg
US Patent 6,812,143, 2004
Air channel interconnects for 3-D integration
LL Hsu, BL Ji, F Liu, CE Murray
US Patent 8,198,174, 2012
A rigorous comparison of X-ray diffraction thickness measurement techniques using silicon-on-insulator thin films
AJ Ying, CE Murray, IC Noyan
Journal of Applied Crystallography 42 (3), 401-410, 2009
The system can't perform the operation now. Try again later.
Articles 1–20