| Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires EA Anyebe, MK Rajpalke, TD Veal, CJ Jin, ZM Wang, QD Zhuang Nano Research 8, 1309-1319, 2015 | 73 | 2015 |
| Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy QD Zhuang, EA Anyebe, R Chen, H Liu, AM Sanchez, MK Rajpalke, ... Nano Letters 15 (2), 1109-1116, 2015 | 63 | 2015 |
| Novel type‐II InAs/AlSb core–shell nanowires and their enhanced negative photocurrent for efficient photodetection H Li, H Alradhi, Z Jin, EA Anyebe, AM Sanchez, WM Linhart, R Kudrawiec, ... Advanced Functional Materials 28 (8), 1705382, 2018 | 47 | 2018 |
| Realization of vertically aligned, ultrahigh aspect ratio InAsSb nanowires on graphite EA Anyebe, AM Sánchez, S Hindmarsh, X Chen, J Shao, MK Rajpalke, ... Nano Letters 15 (7), 4348-4355, 2015 | 42 | 2015 |
| Emerging type‐II superlattices of InAs/InAsSb and InAs/GaSb for mid‐wavelength infrared photodetectors DO Alshahrani, M Kesaria, EA Anyebe, V Srivastava, DL Huffaker Advanced photonics research 3 (2), 2100094, 2022 | 37 | 2022 |
| Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors EA Anyebe, I Sandall, ZM Jin, AM Sanchez, MK Rajpalke, TD Veal, ... Scientific reports 7 (1), 46110, 2017 | 23 | 2017 |
| Recent trends in 8-14 µm type-II superlattice infrared detectors D Kwan, M Kesaria, E Anyebe, D Huffaker | 22 | 2021 |
| Self-catalysed InAs1-xSbx nanowires grown directly on bare Si substrates EA Anyebe, Q Zhuang Materials Research Bulletin 60, 572-575, 2014 | 21 | 2014 |
| Self‐catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy EA Anyebe, Q Zhuang, AM Sánchez, S Lawson, AJ Robson, ... physica status solidi (RRL)–Rapid Research Letters 8 (7), 658-662, 2014 | 19 | 2014 |
| Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy QD Zhuang, EA Anyebe, AM Sanchez, MK Rajpalke, TD Veal, A Zhukov, ... Nanoscale research letters 9, 1-7, 2014 | 15 | 2014 |
| Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene EA Anyebe, M Kesaria Nano Select, 2020 | 9 | 2020 |
| The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy EA Anyebe, Q Zhuang, M Kesaria, A Krier Semiconductor science and technology 29 (8), 085010, 2014 | 9 | 2014 |
| Optical and electrical performance of 5 µm InAs/GaSb Type-II superlattice for NOx sensing application M Kesaria, D Alshahrani, D Kwan, E Anyebe, V Srivastava Materials Research Bulletin 142, 111424, 2021 | 7 | 2021 |
| Recent progress on the gold-free integration of ternary III–as antimonide nanowires directly on silicon EA Anyebe Nanomaterials 10 (10), 2064, 2020 | 6 | 2020 |
| Influence of growth parameters on In-droplet-assisted growth of InAs nanowires on silicon EA Anyebe Applied Nanoscience 7 (7), 365-370, 2017 | 6 | 2017 |
| Photoluminescence characteristics of Zinc Blende inAs nanowires EA Anyebe, M Kesaria Scientific reports 9 (1), 1-7, 2019 | 4 | 2019 |
| Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs DCM Kwan, M Kesaria, EA Anyebe, DO Alshahrani, M Delmas, BL Liang, ... Applied Physics Letters 118 (20), 2021 | 3 | 2021 |
| A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE EA Anyebe, M Kesaria, AM Sanchez, Q Zhuang Applied Physics A 126, 1-8, 2020 | 3 | 2020 |
| Molecular Beam Epitaxy growth of III-V Semiconductor Nanowires EA Anyebe J.Nanotech. Prog. Int. (JONPI) 6 (2), 1-24, 2016 | | 2016 |
| Growth of Narrow Band Gap Semiconductor Nanowires on Silicon and Graphitic Substrates by Droplet Epitaxy EA Anyebe PQDT-UK & Ireland, 2015 | | 2015 |
Qiandong ZhuangPhysics Department, Lancaster UniversityPotvrđena adresa e-pošte na lancaster.ac.uk
