| Third-generation infrared photodetector arrays A Rogalski, J Antoszewski, L Faraone Journal of applied physics 105 (9), 2009 | 971 | 2009 |
| Progress, challenges, and opportunities for HgCdTe infrared materials and detectors W Lei, J Antoszewski, L Faraone Applied Physics Reviews 2 (4), 2015 | 348 | 2015 |
| New concepts in infrared photodetector designs P Martyniuk, J Antoszewski, M Martyniuk, L Faraone, A Rogalski Applied Physics Reviews 1 (4), 2014 | 280 | 2014 |
| Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films H Huang, KJ Winchester, A Suvorova, BR Lawn, Y Liu, XZ Hu, JM Dell, ... Materials Science and Engineering: A 435, 453-459, 2006 | 243 | 2006 |
| Improved quantitative mobility spectrum analysis for Hall characterization I Vurgaftman, JR Meyer, CA Hoffman, D Redfern, J Antoszewski, ... Journal of Applied Physics 84 (9), 4966-4973, 1998 | 167 | 1998 |
| Scattering mechanisms limiting two-dimensional electron gas mobility in modulation-doped field-effect transistors J Antoszewski, M Gracey, JM Dell, L Faraone, TA Fisher, G Parish, YF Wu, ... Journal of Applied Physics 87 (8), 3900-3904, 2000 | 161 | 2000 |
| Widely tunable MEMS-based Fabry–Perot filter JS Milne, JM Dell, AJ Keating, L Faraone Journal of microelectromechanical systems 18 (4), 905-913, 2009 | 150 | 2009 |
| Floating gate memory device with facing asperities on floating and control gates L Faraone US Patent 4,757,360, 1988 | 141 | 1988 |
| Magneto-transport characterization using quantitative mobility-spectrum analysis J Antoszewski, DJ Seymour, L Faraone, JR Meyer, CA Hoffman Journal of electronic materials 24, 1255-1262, 1995 | 135 | 1995 |
| /sup 60/Co gamma irradiation effects on n-GaN Schottky diodes GA Umana-Membreno, JM Dell, G Parish, BD Nener, L Faraone, ... IEEE Transactions on Electron Devices 50 (12), 2326-2334, 2003 | 129 | 2003 |
| MEMS-based microspectrometer technologies for NIR and MIR wavelengths LP Schuler, JS Milne, JM Dell, L Faraone Journal of Physics D: Applied Physics 42 (13), 133001, 2009 | 122 | 2009 |
| Temperature-dependent characterization of AlGaN/GaN HEMTs: Thermal and source/drain resistances R Menozzi, GA Umana-Membreno, BD Nener, G Parish, G Sozzi, ... IEEE Transactions on Device and Materials Reliability 8 (2), 255-264, 2008 | 118 | 2008 |
| Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry–Perot optical filters H Huang, K Winchester, Y Liu, XZ Hu, CA Musca, JM Dell, L Faraone Journal of Micromechanics and Microengineering 15 (3), 608, 2005 | 97 | 2005 |
| Quantitative mobility spectrum analysis of multicarrier conduction in semiconductors JR Meyer, CA Hoffman, J Antoszewski, L Faraone Journal of applied physics 81 (2), 709-713, 1997 | 89 | 1997 |
| Ultrathin tunable terahertz absorber based on MEMS-driven metamaterial M Liu, M Susli, D Silva, G Putrino, H Kala, S Fan, M Cole, L Faraone, ... Microsystems & nanoengineering 3 (1), 1-6, 2017 | 88 | 2017 |
| Monolithic integration of an infrared photon detector with a MEMS-based tunable filter CA Musca, J Antoszewski, KJ Winchester, AJ Keating, T Nguyen, K Silva, ... IEEE electron device letters 26 (12), 888-890, 2005 | 87 | 2005 |
| 60Co gamma-irradiation-induced defects in GA Umana-Membreno, JM Dell, TP Hessler, BD Nener, G Parish, ... Applied physics letters 80 (23), 4354-4356, 2002 | 86 | 2002 |
| Effects of partially occupied sub-bands on two-dimensional electron mobility in heterostructures A Asgari, M Kalafi, L Faraone Journal of applied physics 95 (3), 1185-1190, 2004 | 77 | 2004 |
| Characterization of thermally oxidized n+polycrystalline silicon L Faraone, RD Vibronek, JT McGinn IEEE transactions on electron devices 32 (3), 577-583, 1985 | 77 | 1985 |
| HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology JM Dell, J Antoszewski, MH Rais, C Musca, JK White, BD Nener, ... Journal of Electronic Materials 29, 841-848, 2000 | 76 | 2000 |
