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Cited by
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Since 2019
Citations
25
24
h-index
1
1
i10-index
1
1
0
8
4
2018
2019
2020
2021
2022
2023
2024
1
3
4
4
7
4
2
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Co-authors
Nael Mizanur Rahman
Micron Technology
Verified email at micron.com
Md. Kawsar Alam
Professor, Bangladesh University of Engineering and Technology
Verified email at eee.buet.ac.bd
Azad Naeemi
Professor of Electrical and Computer Engineering, Georgia Institute of Technology
Verified email at gatech.edu
Sou-Chi Chang
Components Research at Intel
Verified email at intel.com
Ian A Young
Intel Corporation
Verified email at intel.com
Hai Li
Intel / CMU
Verified email at intel.com
Dmitri E. Nikonov
Distinguished Engineer, Kepler Computing
Verified email at intel.com
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Mohammad Adnaan
PhD candidate,
Georgia Institute of Technology
Verified email at gatech.edu -
Homepage
Ferroelectric memory devices
Device compact model
Memory circuit and systems
DFT simulations
Articles
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Year
First-principles calculation of the optoelectronic properties of doped methylammonium lead halide perovskites: A DFT-based study
NM Rahman, M Adnaan, D Adhikary, M Islam, MK Alam
Computational Materials Science 150, 439-447
, 2018
24
2018
A Compact Model for Ferroelectric Capacitors Based on Multidomain Phase-Field Framework
M Adnaan, SC Chang, H Li, D Nikonov, IA Young, A Naeemi
IEEE Transactions on Electron Devices 70 (7), 3523-3529
, 2023
1
2023
Cross-layer Modeling and Design of Content Addressable Memories in Advanced Technology Nodes for Similarity Search
S Narla, P Kumar, M Adnaan, A Naeemi
arXiv preprint arXiv:2403.15328
, 2024
2024
Compact physical model for ferroelectric / antiferroelectric / dielectric mixed phase capacitors
M Adnaan, MM Islam, SC Chang, H Li, IA Young, A Naeemi
IEEE Electron Device Letters 45 (2), 280-283
, 2023
2023
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