| Fermi‐level pinning free high‐performance 2D CMOS inverter fabricated with van der Waals bottom contacts TD Ngo, Z Yang, M Lee, F Ali, I Moon, DG Kim, T Taniguchi, K Watanabe, ... Advanced Electronic Materials 7 (5), 2001212, 2021 | 39 | 2021 |
| Control of the Schottky Barrier and Contact Resistance at Metal–WSe2 Interfaces by Polymeric Doping TD Ngo, M Lee, Z Yang, F Ali, I Moon, WJ Yoo Advanced Electronic Materials 6 (10), 2000616, 2020 | 24 | 2020 |
| Recent progress in 1D contacts for 2D‐material‐based devices MS Choi, N Ali, TD Ngo, H Choi, B Oh, H Yang, WJ Yoo Advanced Materials 34 (39), 2202408, 2022 | 18 | 2022 |
| Traps at the hBN/WSe2 interface and their impact on polarity transition in WSe2 F Ali, F Ahmed, M Taqi, SB Mitta, TD Ngo, DJ Eom, K Watanabe, ... 2D Materials 8 (3), 035027, 2021 | 17 | 2021 |
| Chemical Dopant‐Free Doping by Annealing and Electron Beam Irradiation on 2D Materials MS Choi, M Lee, TD Ngo, J Hone, WJ Yoo Advanced Electronic Materials 7 (10), 2100449, 2021 | 16 | 2021 |
| Selective Electron Beam Patterning of Oxygen‐Doped WSe2 for Seamless Lateral Junction Transistors TD Ngo, MS Choi, M Lee, F Ali, Y Hassan, N Ali, S Liu, C Lee, J Hone, ... Advanced Science 9 (26), 2202465, 2022 | 15 | 2022 |
| Metal–Insulator Transition Driven by Traps in 2D WSe2 Field‐Effect Transistor F Ali, N Ali, M Taqi, TD Ngo, M Lee, H Choi, WK Park, E Hwang, WJ Yoo Advanced Electronic Materials 8 (9), 2200046, 2022 | 10 | 2022 |
| Modulation of Contact Resistance of Dual‐Gated MoS2 FETs Using Fermi‐Level Pinning‐Free Antimony Semi‐Metal Contacts TD Ngo, T Huynh, H Jung, F Ali, J Jeon, MS Choi, WJ Yoo Advanced Science 10 (21), 2301400, 2023 | 6 | 2023 |
| Anomalously persistent p-type behavior of WSe 2 field-effect transistors by oxidized edge-induced Fermi-level pinning TD Ngo, MS Choi, M Lee, F Ali, WJ Yoo Journal of Materials Chemistry C 10 (3), 846-853, 2022 | 6 | 2022 |
| Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe2 FETs K Lee, TD Ngo, S Lee, H Shin, MS Choi, J Hone, WJ Yoo Advanced Electronic Materials, 2200955, 2023 | 5 | 2023 |
| Self‐Forming p–n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts HY Le Thi, TD Ngo, NAN Phan, WJ Yoo, K Watanabe, T Taniguchi, N Aoki, ... Small 18 (46), 2204547, 2022 | 5 | 2022 |
| Achieving Ultrahigh Electron Mobility in PdSe2 Field‐Effect Transistors via Semimetal Antimony as Contacts Z Wang, N Ali, TD Ngo, H Shin, S Lee, WJ Yoo Advanced Functional Materials 33 (28), 2301651, 2023 | 4 | 2023 |
| Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping TD Ngo, T Huynh, I Moon, T Taniguchi, K Watanabe, MS Choi, WJ Yoo Nano Letters 23 (23), 11345-11352, 2023 | 1 | 2023 |
| Doping-Free High-Performance Photovoltaic Effect in a WSe2 Lateral p-n Homojunction Formed by Contact Engineering HY Le Thi, TD Ngo, NAN Phan, H Shin, I Uddin, A Venkatesan, CT Liang, ... ACS Applied Materials & Interfaces 15 (29), 35342-35349, 2023 | 1 | 2023 |
| Gate-Controlled Metal to Insulator Transition in Black Phosphorus Nanosheet-Based Field Effect Transistors N Ali, M Lee, F Ali, H Shin, TD Ngo, K Watanabe, T Taniguchi, B Oh, ... ACS Applied Nano Materials 5 (12), 18376-18384, 2022 | 1 | 2022 |
| Link between T-Linear Resistivity and Quantum Criticality in Ambipolar Black Phosphorus N Ali, B Singh, PK Srivastava, F Ali, M Lee, H Park, H Shin, K Lee, H Choi, ... ACS nano, 2024 | | 2024 |
| Analysis of p-Type Doping in Graphene Induced by Monolayer-Oxidized TMDs T Huynh, TD Ngo, H Choi, M Choi, W Lee, TD Nguyen, TT Tran, K Lee, ... ACS Applied Materials & Interfaces 16 (3), 3694-3702, 2024 | | 2024 |
| Percolation-Based Metal–Insulator Transition in Black Phosphorus Field Effect Transistors N Ali, M Lee, F Ali, TD Ngo, H Park, H Shin, WJ Yoo ACS Applied Materials & Interfaces 15 (10), 13299-13306, 2023 | | 2023 |
| Observation of strange metal in hole-doped valley-spin insulator TD Nguyen, B Mallesh, SJ Kim, H Bouzid, B Cho, XP Le, TD Ngo, WJ Yoo, ... arXiv preprint arXiv:2209.03672, 2022 | | 2022 |
| Chemical Dopant‐Free Doping by Annealing and Electron Beam Irradiation on 2D Materials (Adv. Electron. Mater. 10/2021). MS Choi, M Lee, TD Ngo, J Hone, WJ Yoo Advanced Electronic Materials 7 (10), 2021 | | 2021 |
Won Jong YooProfessor of Sungkyunkwan UniversityPotvrđena adresa e-pošte na skku.edu
