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Wei Tai
Wei Tai
Verified email at qti.qualcomm.com
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A transformer-combined 31.5 dBm outphasing power amplifier in 45 nm LP CMOS with dynamic power control for back-off power efficiency enhancement
W Tai, H Xu, A Ravi, H Lakdawala, O Bochobza-Degani, LR Carley, ...
IEEE Journal of Solid-State Circuits 47 (7), 1646-1658, 2012
912012
A 0.7 W fully integrated 42GHz power amplifier with 10% PAE in 0.13 µm SiGe BiCMOS
W Tai, LR Carley, DS Ricketts
2013 IEEE International Solid-State Circuits Conference Digest of Technical …, 2013
842013
Calibration-Kit Design for Millimeter-Wave Silicon Integrated Circuits
DF Williams, P Corson, J Sharma, H Krishnaswamy, W Tai, Z George, ...
IEEE Transactions on Microwave Theory and Techniques 61 (7), 2685 - 2694, 2013
752013
Calibrations for Millimeter-Wave Silicon Transistor Characterization
DF Williams, P Corson, J Sharma, H Krishnaswamy, W Tai, Z George, ...
IEEE Transactions on Microwave Theory and Techniques 62 (3), 658 - 668, 2014
532014
A W-band 21.1 dBm Power Amplifier with an 8-way Zero-degree Combiner in 45 nm SOI CMOS
W Tai, DS Ricketts
Microwave Symposium (IMS), 2014 IEEE MTT-S International, 2014
242014
A transmission line based resistance compression network (TRCN) for microwave applications
J Xu, W Tai, DS Ricketts
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-3, 2013
212013
A 31.5 dBm outphasing class-D power amplifier in 45nm CMOS with back-off efficiency enhancement by dynamic power control
W Tai, H Xu, A Ravi, H Lakdawala, OB Degani, LR Carley, Y Palaskas
2011 Proceedings of the ESSCIRC (ESSCIRC), 131-134, 2011
202011
A Q-band SiGe power amplifier with 17.5 dBm saturated output power and 26% peak PAE
W Tai, LR Carley, DS Ricketts
2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 146-149, 2011
112011
A compact, 36 to 72 GHz 15.8 dBm power amplifier with 66.7% fractional bandwidth in 45 nm SOI CMOS
W Tai, DS Ricketts
Microwave and Optical Technology Letters 56 (1), 166-169, 2014
62014
Microwave watt-level rectifiers for power recycling applications
J Xu, W Tai, DS Ricketts
2013 European Microwave Conference, 1487-1490, 2013
52013
74 GHz, 17.2 dBm power amplifier in 45 nm SOI CMOS
W Tai, DS Ricketts
Electronics letters 49 (12), 758-759, 2013
42013
Analysis and design of high-power and efficient, millimeter-wave power amplifier systems using zero degree combiners
W Tai, M Abbasi, DS Ricketts
International Journal of Electronics 105 (1), 1-11, 2018
22018
A Q-band power amplifier with high-gain pre-driver and 18.7 dBm output power for fully integrated CMOS transmitters
W Tai, DS Ricketts
Power Amplifiers for Wireless and Radio Applications (PAWR), 2014 IEEE …, 2014
22014
Efficient watt-level power amplifiers in deeply scaled cmos
W Tai
Carnegie Mellon University, 2012
22012
A compact, high-gain Q-band stacked power amplifier in 45nm SOI CMOS with 19.2dBm Psat and 19% PAE
W Tai, DS Ricketts
2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio …, 2015
12015
Linear power amplification with high back-off efficiency: An out-phasing approach
H Xu, A Ravi, W Tai, P Yorgos
RF and mm-Wave Power Generation in Silicon, 135-181, 2016
2016
Millimeter-Wave Power Amplifiers for Wireless Communications
W Tai, D Ricketts, R Carley
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