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Sofia Johansson
Sofia Johansson
Verified email at angstrom.uu.se
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Year
Vertical InAs Nanowire Wrap Gate Transistors with ft> 7 GHz and f max> 20 GHz
M Egard, S Johansson, AC Johansson, KM Persson, AW Dey, BM Borg, ...
Nano letters 10 (3), 809-812, 2010
1362010
In-line analysis of organ-on-chip systems with sensors: Integration, fabrication, challenges, and potential
S Fuchs, S Johansson, AØ Tjell, G Werr, T Mayr, M Tenje
ACS Biomaterials Science & Engineering 7 (7), 2926-2948, 2021
1092021
High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
S Johansson, E Memisevic, LE Wernersson, E Lind
Electron Device Letters, IEEE 35 (5), 518-520, 2014
952014
A High-Frequency Transconductance Method for Characterization of High-κ Border Traps in III-V MOSFETs
S JOHANSSON, M BERG, KM PERSSON, E LIND
Transactions on Electron Devices, IEEE 60 (2), 776-781, 2013
892013
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
KM Persson, M Berg, MB Borg, J Wu, S Johansson, J Svensson, ...
Transactions on Electron Device, IEEE 60 (9), 2761-2767, 2013
742013
Organ-on-a-chip technology: a novel approach to investigate cardiovascular diseases
V Paloschi, M Sabater-Lleal, H Middelkamp, A Vivas, S Johansson, ...
Cardiovascular research 117 (14), 2742-2754, 2021
702021
A practical guide to microfabrication and patterning of hydrogels for biomimetic cell culture scaffolds
M Tenje, F Cantoni, AMP Hernández, SS Searle, S Johansson, L Barbe, ...
Organs-on-a-Chip 2, 100003, 2020
602020
RF characterization of vertical InAs nanowire wrap-gate transistors integrated on Si substrates
S Johansson, M Egard, S Gorji Ghalamestani, BM Borg, M Berg, ...
Microwave Theory and Techniques, IEEE Transactions on 59 (10), 2733-2738, 2011
452011
Uniform and position-controlled InAs nanowires on 2′′ Si substrates for transistor applications
SG Ghalamestani, S Johansson, BM Borg, E Lind, KA Dick, ...
Nanotechnology 23 (1), 015302, 2011
422011
Uniform and position-controlled InAs nanowires on 2′′ Si substrates for transistor applications
SG Ghalamestani, S Johansson, BM Borg, E Lind, KA Dick, ...
Nanotechnology 23 (1), 015302, 2011
422011
Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric
G Roll, J Mo, E Lind, S Johansson, LE Wernersson
Applied Physics Letters 106 (20), 2015
232015
Highly controlled InAs nanowires on Si (111) wafers by MOVPE
SG Ghalamestani, S Johansson, BM Borg, KA Dick, LE Wernersson
physica status solidi (c) 9 (2), 206-209, 2012
202012
RF and DC Analysis of Stressed InGaAs MOSFETs
G Roll, E Lind, M Egard, S Johansson, L Ohlsson, LE Wernersson
Electron Device Letters, IEEE 35 (2), 181-183, 2014
162014
A microscopy-compatible temperature regulation system for single-cell phenotype analysis–demonstrated by thermoresponse mapping of microalgae
M Andersson, S Johansson, H Bergman, L Xiao, L Behrendt, M Tenje
Lab on a Chip 21 (9), 1694-1705, 2021
102021
Photophysiological response of Symbiodiniaceae single cells to temperature stress
L Xiao, S Johansson, S Rughöft, F Burki, MM Sandin, M Tenje, L Behrendt
The ISME Journal 16 (8), 2060-2064, 2022
72022
Two-Photon Polymerization Printing with High Metal Nanoparticle Loading
NI Kilic, GM Saladino, S Johansson, R Shen, C McDorman, MS Toprak, ...
ACS Applied Materials & Interfaces 15 (42), 49794-49804, 2023
52023
High frequency performance of vertical InAs nanowire MOSFET
E Lind, M Egard, S Johansson, AC Johansson, BM Borg, C Thelander, ...
2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010
42010
RF characterization of vertical InAs nanowire MOSFETs with f t and f max above 140 GHz
S Johansson, E Memisevic, LE Wernersson, E Lind
26th International Conference on Indium Phosphide and Related Materials …, 2014
32014
Characterization of border traps in III-V MOSFETs using an RF transconductance method
S Johansson, J Mo, E Lind
2013 Proceedings of the European Solid-State Device Research Conference …, 2013
32013
Temperature and annealing effects on InAs nanowire MOSFETs
S Johansson, S Gorji Ghalamestani, M Borg, E Lind, LE Wernersson
Microelectronic Engineering 88 (7), 1105-1108, 2011
32011
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