Prati
Feng Liu
Feng Liu
Ph.D. student, Princeton University
Potvrđena adresa e-pošte na princeton.edu
Naslov
Citirano
Citirano
Godina
A survey of the practice of computational science
P Prabhu, TB Jablin, A Raman, Y Zhang, J Huang, H Kim, NP Johnson, ...
State of the Practice Reports, 19, 2011
1372011
Vertically stacked silicon nanowire transistors fabricated by inductive plasma etching and stress-limited oxidation
RMY Ng, T Wang, F Liu, X Zuo, J He, M Chan
Electron Device Letters, IEEE 30 (5), 520-522, 2009
1282009
Dynamically managed data for CPU-GPU architectures
TB Jablin, JA Jablin, P Prabhu, F Liu, DI August
Proceedings of the Tenth International Symposium on Code Generation and …, 2012
1172012
A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body
F Liu, J He, L Zhang, J Zhang, J Hu, C Ma, M Chan
Electron Devices, IEEE Transactions on 55 (8), 2187-2194, 2008
952008
Dynamic synthesis for relaxed memory models
F Liu, N Nedev, N Prisadnikov, M Vechev, E Yahav
Proceedings of the 33rd ACM SIGPLAN conference on Programming Language …, 2012
902012
A non-charge-sheet analytic model for symmetric double-gate MOSFETs with smooth transition between partially and fully depleted operation modes
F Liu, J He, J Zhang, Y Chen, M Chan
Electron Devices, IEEE Transactions on 55 (12), 3494-3502, 2008
482008
Scalable speculative parallelization on commodity clusters
H Kim, A Raman, F Liu, JW Lee, DI August
Proceedings of the 2010 43rd Annual IEEE/ACM International Symposium on …, 2010
462010
Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes
F Liu, J He, Y Fu, J Hu, W Bian, Y Song, X Zhang, M Chan
IEEE transactions on electron devices, 271-276, 2008
46*2008
A carrier-based approach for compact modeling of the long-channel undoped symmetric double-gate MOSFETs
J He, F Liu, J Zhang, J Feng, J Hu, S Yang, M Chan
Electron Devices, IEEE Transactions on 54 (5), 1203-1209, 2007
432007
DynaSpAM: Dynamic spatial architecture mapping using Out of Order instruction schedules
F Liu, H Ahn, SR Beard, T Oh, DI August
Computer Architecture (ISCA), 2015 ACM/IEEE 42nd Annual International …, 2015
412015
Cgpa: coarse-grained pipelined accelerators
F Liu, S Ghosh, NP Johnson, DI August
Design Automation Conference (DAC), 2014 51st ACM/EDAC/IEEE, 1-6, 2014
352014
A compact model of silicon-based nanowire MOSFETs for circuit simulation and design
J Yang, J He, F Liu, L Zhang, F Liu, X Zhang, M Chan
Electron Devices, IEEE Transactions on 55 (11), 2898-2906, 2008
352008
An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body
J He, F Liu, W Bian, J Feng, J Zhang, X Zhang
Semiconductor science and technology 22 (6), 671, 2007
332007
Effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs with continuous solution from accumulation to strong-inversion regions
F Liu, L Zhang, J Zhang, J He, M Chan
Semiconductor Science and Technology 24, 085005, 2009
282009
A charge-based compact model for predicting the current–voltage and capacitance–voltage characteristics of heavily doped cylindrical surrounding-gate MOSFETs
F Liu, J Zhang, F He, F Liu, L Zhang, M Chan
Solid-State Electronics 53 (1), 49-53, 2009
272009
An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell Structure
L Zhang, J He, J Zhang, F Liu, Y Fu, Y Song, X Zhang
Electron Devices, IEEE Transactions on 55 (11), 2907-2917, 2008
202008
Parallel assertions for debugging parallel programs
D Schwartz-Narbonne, F Liu, T Pondicherry, D August, S Malik
Formal Methods and Models for Codesign (MEMOCODE), 2011 9th IEEE/ACM …, 2011
142011
A unified charge-based model for symmetric DG MOSFETs valid for both heavily doped body and undoped channel
L Zhang, J He, F Liu, J Zhang, Y Song
Mixed Design of Integrated Circuits and Systems, 2008. MIXDES 2008. 15th …, 2008
122008
GPU Accelerated Array Queries: The Good, the Bad, and the Promising
F Liu, K Lee, I Roy, V Talwar, S Chen, J Chang, P Ranganathan
82014
A Surface-Potential-Based Non-Charge-Sheet Core Model for SOI MOSFETs Valid to PD and FD Operation Modes
J Zhang, J He, F Liu, C Ma, J Feng, M Chan
The 5th International Workshop on Compact Modeling (IWCM'08), Seoul, South Korea, 2008
72008
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