Prati
Fabian Ducry
Fabian Ducry
Potvrđena adresa e-pošte na iis.ee.ethz.ch
Naslov
Citirano
Citirano
Godina
All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale
C Haffner, W Heni, Y Fedoryshyn, J Niegemann, A Melikyan, DL Elder, ...
Nature Photonics 9 (8), 525-528, 2015
5072015
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ...
Nature Electronics 4 (2), 98-108, 2021
892021
Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching
B Cheng, A Emboras, Y Salamin, F Ducry, P Ma, Y Fedoryshyn, ...
Communications Physics 2 (1), 1-9, 2019
402019
Atomic scale photodetection enabled by a memristive junction
A Emboras, A Alabastri, F Ducry, B Cheng, Y Salamin, P Ma, S Andermatt, ...
ACS nano 12 (7), 6706-6713, 2018
372018
Opto-electronic memristors: Prospects and challenges in neuromorphic computing
A Emboras, A Alabastri, P Lehmann, K Portner, C Weilenmann, P Ma, ...
Applied Physics Letters 117 (23), 230502, 2020
252020
High-speed plasmonic Mach-Zehnder modulator in a waveguide
C Haffner, W Heni, Y Fedoryshyn, DL Elder, A Melikyan, B Bäuerle, ...
2014 The European Conference on Optical Communication (ECOC), 1-3, 2014
232014
Ab-initio modeling of CBRAM cells: From ballistic transport properties to electro-thermal effects
F Ducry, A Emboras, S Andermatt, MH Bani-Hashemian, B Cheng, ...
2017 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2017
92017
Hybrid Mode-Space–Real-Space Approximation for First-Principles Quantum Transport Simulation of Inhomogeneous Devices
F Ducry, MH Bani-Hashemian, M Luisier
Physical Review Applied 13 (4), 044067, 2020
82020
On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices
T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, T Müller, ...
arXiv preprint arXiv:2008.04144, 2020
62020
Electro-thermal transport in disordered nanostructures: a modeling perspective
F Ducry, J Aeschlimann, M Luisier
Nanoscale Advances 2 (7), 2648-2667, 2020
62020
Nat. Photonics 9, 525 (2015)
C Haffner, W Heni, Y Fedoryshyn, J Niegemann, A Melikyan, DL Elder, ...
52015
Microcanonical RT-TDDFT simulations of realistically extended devices
S Andermatt, MH Bani-Hashemian, F Ducry, S Brück, S Clima, G Pourtois, ...
The Journal of Chemical Physics 149 (12), 124701, 2018
42018
Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS2 Transistors
S Fiore, C Klinkert, F Ducry, J Backman, M Luisier
Materials 15 (3), 1062, 2022
22022
Threshold Switching Enabled Sub-pW-Leakage, Hysteresis-Free Circuits
B Cheng, A Emboras, E Passerini, M Lewerenz, U Koch, L Wu, J Liao, ...
IEEE Transactions on Electron Devices 68 (6), 3112-3118, 2021
22021
A Hybrid Mode-Space/Real-Space Scheme for DFT+ NEGF Device Simulations
F Ducry, MH Bani-Hashemian, M Luisier
2019 International Conference on Simulation of Semiconductor Processes and …, 2019
22019
Ab initio Quantum Transport in Conductive Bridging Random Access Memory
F Ducry
ETH Zurich, 2021
12021
Ultra-steep-slope transistor enabled by an atomic memristive switch
B Cheng, A Emboras, E Passerini, M Lewerenz, M Eppenberger, ...
Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices …, 2020
12020
Investigation of the Electrode Materials in Conductive Bridging RAM from First-Principle
F Ducry, K Portner, S Andermatt, M Luisier
2018 International Conference on Simulation of Semiconductor Processes and …, 2018
12018
Insights into few-atom conductive bridging random access memory cells with a combined force-field/ab initio scheme
J Aeschlimann, MH Bani-Hashemian, F Ducry, A Emboras, M Luisier
Solid-State Electronics 199, 108493, 2023
2023
Ultralow‐Power Atomic‐Scale Tin Transistor with Gate Potential in Millivolt
F Xie, F Ducry, M Luisier, J Leuthold, T Schimmel
Advanced Electronic Materials 8 (10), 2200225, 2022
2022
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