| The physical mechanisms behind the strain-induced electron mobility increase in InGaAs-on-InP MOSFETs S Krivec, M Poljak, T Suligoj IEEE transactions on electron devices 65 (7), 2784-2789, 2018 | 13 | 2018 |
| Electron mobility in ultra-thin InGaAs channels: Impact of surface orientation and different gate oxide materials S Krivec, M Poljak, T Suligoj Solid-state electronics 115, 109-119, 2016 | 13 | 2016 |
| Comparison of RF performance between 20 nm-gate bulk and SOI FinFET S Krivec, H Prgić, M Poljak, T Suligoj 2014 37th International Convention on Information and Communication …, 2014 | 9 | 2014 |
| Strain-induced increase of electron mobility in ultra-thin InGaAs-OI MOS transistors S Krivec, M Poljak, T Suligoj 2017 Joint International EUROSOI Workshop and International Conference on …, 2017 | 4 | 2017 |
| Band-structure of ultra-thin InGaAs channels: Impact of biaxial strain and thickness scaling S Krivec, M Poljak, T Suligoj 2017 40th International Convention on Information and Communication …, 2017 | 1 | 2017 |
| On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels M Poljak, S Krivec, T Suligoj EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015 | 1 | 2015 |
| Electron transport in ultra-thin strained InGaAs MOS devices S Krivec University of Zagreb. Faculty of Electrical Engineering and Computing …, 2018 | | 2018 |
| Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices S Krivec, M Poljak, T Suligoj 2015 38th International Convention on Information and Communication …, 2015 | | 2015 |
| Modeliranje transporta elektrona u galij-nitridnim tranzistorima s efektom polja S Krivec University of Zagreb. Faculty of Electrical Engineering and Computing, 2014 | | 2014 |
