Rainer Timm
Rainer Timm
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Change of InAs/GaAs quantum dot shape and composition during capping
H Eisele, A Lenz, R Heitz, R Timm, M Dähne, Y Temko, T Suzuki, K Jacobi
Journal of Applied Physics 104 (12), 2008
Reversed truncated cone composition distribution of quantum dots overgrown by an layer in a GaAs matrix
A Lenz, R Timm, H Eisele, C Hennig, SK Becker, RL Sellin, UW Pohl, ...
Applied Physics Letters 81 (27), 5150-5152, 2002
Electronic and structural differences between wurtzite and zinc blende InAs nanowire surfaces: experiment and theory
M Hjort, S Lehmann, J Knutsson, AA Zakharov, YA Du, S Sakong, R Timm, ...
ACS nano 8 (12), 12346-12355, 2014
Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
R Timm, A Fian, M Hjort, C Thelander, E Lind, JN Andersen, ...
Applied Physics Letters 97 (13), 2010
Self-organized formation of GaSb/GaAs quantum rings
R Timm, H Eisele, A Lenz, L Ivanova, G Balakrishnan, DL Huffaker, ...
Physical review letters 101 (25), 256101, 2008
Direct imaging of atomic scale structure and electronic properties of GaAs wurtzite and zinc blende nanowire surfaces
M Hjort, S Lehmann, J Knutsson, R Timm, D Jacobsson, E Lundgren, ...
Nano letters 13 (9), 4492-4498, 2013
Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning
DB Suyatin, V Jain, VA Nebol’sin, J Trägårdh, ME Messing, JB Wagner, ...
Nature Communications 5 (1), 3221, 2014
Structure and intermixing of GaSb∕ GaAs quantum dots
R Timm, H Eisele, A Lenz, SK Becker, J Grabowski, TY Kim, ...
Applied physics letters 85 (24), 5890-5892, 2004
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
Z Yong, KM Persson, MS Ram, G D'Acunto, Y Liu, S Benter, J Pan, Z Li, ...
Applied Surface Science 551, 149386, 2021
Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide
R Timm, AR Head, S Yngman, JV Knutsson, M Hjort, SR McKibbin, ...
Nature communications 9 (1), 1412, 2018
Quantum ring formation and antimony segregation in GaSb∕ GaAs nanostructures
R Timm, A Lenz, H Eisele, L Ivanova, M Dähne, G Balakrishnan, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
Nanovoids in InGaAs∕ GaAs quantum dots observed by cross-sectional scanning tunneling microscopy
A Lenz, H Eisele, R Timm, SK Becker, RL Sellin, UW Pohl, D Bimberg, ...
Applied physics letters 85 (17), 3848-3850, 2004
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111) B substrates
J Wu, E Lind, R Timm, M Hjort, A Mikkelsen, LE Wernersson
Applied Physics Letters 100 (13), 2012
Local density of states and interface effects in semimetallic ErAs nanoparticles embedded in GaAs
JK Kawasaki, R Timm, KT Delaney, E Lundgren, A Mikkelsen, ...
Physical Review Letters 107 (3), 036806, 2011
InGaN platelets: synthesis and applications toward green and red light-emitting diodes
Z Bi, F Lenrick, J Colvin, A Gustafsson, O Hultin, A Nowzari, T Lu, ...
Nano Letters 19 (5), 2832-2839, 2019
Direct measurement and analysis of the conduction band density of states in diluted GaAs 1− x N x alloys
L Ivanova, H Eisele, MP Vaughan, P Ebert, A Lenz, R Timm, O Schumann, ...
Physical Review B 82 (16), 161201, 2010
Electrical and surface properties of InAs/InSb nanowires cleaned by atomic hydrogen
JL Webb, J Knutsson, M Hjort, S Gorji Ghalamestani, KA Dick, R Timm, ...
Nano Letters 15 (8), 4865-4875, 2015
Surface chemistry, structure, and electronic properties from microns to the atomic scale of axially doped semiconductor nanowires
M Hjort, J Wallentin, R Timm, AA Zakharov, U Hakanson, JN Andersen, ...
ACS nano 6 (11), 9679-9689, 2012
Structure of InAs/GaAs quantum dots grown with Sb surfactant
R Timm, H Eisele, A Lenz, TY Kim, F Streicher, K Pötschke, UW Pohl, ...
Physica E: Low-Dimensional Systems and Nanostructures 32 (1-2), 25-28, 2006
Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a Ga As 1− x N x capping layer
O Schumann, S Birner, M Baudach, L Geelhaar, H Eisele, L Ivanova, ...
Physical Review B 71 (24), 245316, 2005
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