Follow
Kosuke Nagashio
Kosuke Nagashio
Verified email at material.t.u-tokyo.ac.jp - Homepage
Title
Cited by
Cited by
Year
Crystalline graphdiyne nanosheets produced at a gas/liquid or liquid/liquid interface
R Matsuoka, R Sakamoto, K Hoshiko, S Sasaki, H Masunaga, K Nagashio, ...
Journal of the American Chemical Society 139 (8), 3145-3152, 2017
4612017
Contact resistivity and current flow path at metal/graphene contact
K Nagashio, T Nishimura, K Kita, A Toriumi
Applied Physics Letters 97 (14), 2010
4132010
Purely in-plane ferroelectricity in monolayer SnS at room temperature
N Higashitarumizu, H Kawamoto, CJ Lee, BH Lin, FH Chu, I Yonemori, ...
Nature communications 11 (1), 2428, 2020
2542020
Electrical transport properties of graphene on SiO2 with specific surface structures
K Nagashio, T Yamashita, T Nishimura, K Kita, A Toriumi
Journal of Applied Physics 110 (2), 2011
2282011
Metal/graphene contact as a performance killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance
K Nagashio, T Nishimura, K Kita, A Toriumi
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
2252009
Layer-by-layer dielectric breakdown of hexagonal boron nitride
Y Hattori, T Taniguchi, K Watanabe, K Nagashio
ACS nano 9 (1), 916-921, 2015
2202015
Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices
W Li, J Zhou, S Cai, Z Yu, J Zhang, N Fang, T Li, Y Wu, T Chen, X Xie, ...
Nature Electronics 2 (12), 563-571, 2019
2172019
Desorption kinetics of GeO from GeO2/Ge structure
SK Wang, K Kita, CH Lee, T Tabata, T Nishimura, K Nagashio, A Toriumi
Journal of applied physics 108 (5), 2010
2072010
Mobility variations in mono-and multi-layer graphene films
K Nagashio, T Nishimura, K Kita, A Toriumi
Applied physics express 2 (2), 025003, 2009
1862009
Ge/GeO2 interface control with high pressure oxidation for improving electrical characteristics
CH Lee, T Tabata, T Nishimura, K Nagashio, K Kita, A Toriumi
ECS Transactions 19 (1), 165, 2009
1842009
Opportunities and challenges for Ge CMOS–Control of interfacing field on Ge is a key
A Toriumi, T Tabata, CH Lee, T Nishimura, K Kita, K Nagashio
Microelectronic Engineering 86 (7-9), 1571-1576, 2009
1782009
High-Electron-Mobilityn-MOSFETs With Two-Step Oxidation
CH Lee, T Nishimura, K Nagashio, K Kita, A Toriumi
IEEE transactions on electron devices 58 (5), 1295-1301, 2011
1552011
Density-of-states limited contact resistance in graphene field-effect transistors
K Nagashio, A Toriumi
Japanese Journal of Applied Physics 50 (7R), 070108, 2011
1402011
Growth mechanism of twin-related and twin-free facet Si dendrites
K Nagashio, K Kuribayashi
Acta Materialia 53 (10), 3021-3029, 2005
1332005
Fully dry PMMA transfer of graphene on h-BN using a heating/cooling system
T Uwanno, Y Hattori, T Taniguchi, K Watanabe, K Nagashio
2D Materials 2 (4), 041002, 2015
1322015
Systematic investigation of the intrinsic channel properties and contact resistance of monolayer and multilayer graphene field-effect transistor
K Nagashio, T Nishimura, K Kita, A Toriumi
Japanese Journal of Applied Physics 49 (5R), 051304, 2010
1262010
Ge MOSFETs performance: Impact of Ge interface passivation
CH Lee, T Nishimura, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi
2010 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2010
1192010
High-electron-mobility Ge n-channel metal–oxide–semiconductor field-effect transistors with high-pressure oxidized Y2O3
T Nishimura, CH Lee, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi
Applied physics express 4 (6), 064201, 2011
952011
Solidification and casting
B Cantor, K O'Reilly
CRC press, 2016
842016
Record-high electron mobility in Ge n-MOSFETs exceeding Si universality
CH Lee, T Nishimura, N Saido, K Nagashio, K Kita, A Toriumi
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
842009
The system can't perform the operation now. Try again later.
Articles 1–20