Mirko Poljak
Mirko Poljak
University of Zagreb, Faculty of Electrical Engineering and Computing
Verified email at fer.hr - Homepage
Title
Cited by
Cited by
Year
Assessment of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs using physics-based modeling
M Poljak, V Jovanovic, D Grgec, T Suligoj
IEEE transactions on electron devices 59 (6), 1636-1643, 2012
522012
Improving bulk FinFET DC performance in comparison to SOI FinFET
M Poljak, V Jovanović, T Suligoj
Microelectronic Engineering 86 (10), 2078-2085, 2009
432009
SOI vs. bulk FinFET: body doping and corner effects influence on device characteristics
M Poljak, V Jovanovic, T Suligoj
MELECON 2008-The 14th IEEE Mediterranean Electrotechnical Conference, 425-430, 2008
302008
Suppression of corner effects in wide-channel triple-gate bulk FinFETs
M Poljak, V Jovanović, T Suligoj
Microelectronic Engineering 87 (2), 192-199, 2010
242010
Ultra-high aspect-ratio FinFET technology
V Jovanović, T Suligoj, M Poljak, Y Civale, LK Nanver
Solid-state electronics 54 (9), 870-876, 2010
222010
Influence of edge defects, vacancies, and potential fluctuations on transport properties of extremely scaled graphene nanoribbons
M Poljak, EB Song, M Wang, T Suligoj, KL Wang
IEEE transactions on electron devices 59 (12), 3231-3238, 2012
202012
Technological constrains of bulk FinFET structure in comparison with SOI FinFET
M Poljak, V Jovanovic, T Suligoj
2007 International Semiconductor Device Research Symposium, 1-2, 2007
192007
Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects
M Poljak, T Suligoj
Nano Research 9 (6), 1723-1734, 2016
162016
Influence of substrate type and quality on carrier mobility in graphene nanoribbons
M Poljak, T Suligoj, KL Wang
Journal of Applied Physics 114 (5), 053701, 2013
162013
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications
M Poljak, V Jovanović, T Suligoj
Solid-state electronics 65, 130-138, 2011
142011
Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbons
M Poljak, M Wang, EB Song, T Suligoj, KL Wang
Solid-state electronics 84, 103-111, 2013
132013
Quantum transport analysis of conductance variability in graphene nanoribbons with edge defects
M Poljak, T Suligoj
IEEE Transactions on Electron Devices 63 (2), 537-543, 2015
122015
Electron mobility in ultra-thin InGaAs channels: Impact of surface orientation and different gate oxide materials
S Krivec, M Poljak, T Suligoj
Solid-State Electronics 115, 109-119, 2016
102016
Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons
M Poljak, KL Wang, T Suligoj
Solid-state electronics, (accepted), 2014
102014
Optimum body thickness of (111)-oriented ultra-thin body double-gate MOSFETs with respect to quantum-calculated phonon-limited mobility
M Poljak, V Jovanović, T Suligoj
2009 International Semiconductor Device Research Symposium, 1-2, 2009
92009
Bulk-Si FinFET technology for ultra-high aspect-ratio devices
V Jovanovic, LK Nanver, T Suligoj, M Poljak
2009 Proceedings of the European Solid State Device Research Conference, 241-244, 2009
52009
Suppression of corner effects in triple-gate bulk FinFETs
M Poljak, V Jovanovic, T Suligoj
IEEE EUROCON 2009, 1219-1224, 2009
52009
The potential of phosphorene nanoribbons as channel material for ultrascaled transistors
M Poljak, T Suligoj
IEEE Transactions on Electron Devices 65 (1), 290-294, 2017
42017
Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm
M Poljak, V Jovanović, T Suligoj
IEEE 2011 International SOI Conference, 1-2, 2011
42011
1.9 nm wide ultra-high aspect-ratio bulk-Si FinFETs
V Jovanović, M Poljak, T Suligoj, Y Civale, LK Nanver
2009 Device Research Conference, 261-262, 2009
42009
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Articles 1–20