| Assessment of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs using physics-based modeling M Poljak, V Jovanovic, D Grgec, T Suligoj IEEE transactions on electron devices 59 (6), 1636-1643, 2012 | 52 | 2012 |
| Improving bulk FinFET DC performance in comparison to SOI FinFET M Poljak, V Jovanović, T Suligoj Microelectronic Engineering 86 (10), 2078-2085, 2009 | 43 | 2009 |
| SOI vs. bulk FinFET: body doping and corner effects influence on device characteristics M Poljak, V Jovanovic, T Suligoj MELECON 2008-The 14th IEEE Mediterranean Electrotechnical Conference, 425-430, 2008 | 30 | 2008 |
| Suppression of corner effects in wide-channel triple-gate bulk FinFETs M Poljak, V Jovanović, T Suligoj Microelectronic Engineering 87 (2), 192-199, 2010 | 24 | 2010 |
| Ultra-high aspect-ratio FinFET technology V Jovanović, T Suligoj, M Poljak, Y Civale, LK Nanver Solid-state electronics 54 (9), 870-876, 2010 | 22 | 2010 |
| Influence of edge defects, vacancies, and potential fluctuations on transport properties of extremely scaled graphene nanoribbons M Poljak, EB Song, M Wang, T Suligoj, KL Wang IEEE transactions on electron devices 59 (12), 3231-3238, 2012 | 20 | 2012 |
| Technological constrains of bulk FinFET structure in comparison with SOI FinFET M Poljak, V Jovanovic, T Suligoj 2007 International Semiconductor Device Research Symposium, 1-2, 2007 | 19 | 2007 |
| Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects M Poljak, T Suligoj Nano Research 9 (6), 1723-1734, 2016 | 16 | 2016 |
| Influence of substrate type and quality on carrier mobility in graphene nanoribbons M Poljak, T Suligoj, KL Wang Journal of Applied Physics 114 (5), 053701, 2013 | 16 | 2013 |
| Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications M Poljak, V Jovanović, T Suligoj Solid-state electronics 65, 130-138, 2011 | 14 | 2011 |
| Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbons M Poljak, M Wang, EB Song, T Suligoj, KL Wang Solid-state electronics 84, 103-111, 2013 | 13 | 2013 |
| Quantum transport analysis of conductance variability in graphene nanoribbons with edge defects M Poljak, T Suligoj IEEE Transactions on Electron Devices 63 (2), 537-543, 2015 | 12 | 2015 |
| Electron mobility in ultra-thin InGaAs channels: Impact of surface orientation and different gate oxide materials S Krivec, M Poljak, T Suligoj Solid-State Electronics 115, 109-119, 2016 | 10 | 2016 |
| Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons M Poljak, KL Wang, T Suligoj Solid-state electronics, (accepted), 2014 | 10 | 2014 |
| Optimum body thickness of (111)-oriented ultra-thin body double-gate MOSFETs with respect to quantum-calculated phonon-limited mobility M Poljak, V Jovanović, T Suligoj 2009 International Semiconductor Device Research Symposium, 1-2, 2009 | 9 | 2009 |
| Bulk-Si FinFET technology for ultra-high aspect-ratio devices V Jovanovic, LK Nanver, T Suligoj, M Poljak 2009 Proceedings of the European Solid State Device Research Conference, 241-244, 2009 | 5 | 2009 |
| Suppression of corner effects in triple-gate bulk FinFETs M Poljak, V Jovanovic, T Suligoj IEEE EUROCON 2009, 1219-1224, 2009 | 5 | 2009 |
| The potential of phosphorene nanoribbons as channel material for ultrascaled transistors M Poljak, T Suligoj IEEE Transactions on Electron Devices 65 (1), 290-294, 2017 | 4 | 2017 |
| Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm M Poljak, V Jovanović, T Suligoj IEEE 2011 International SOI Conference, 1-2, 2011 | 4 | 2011 |
| 1.9 nm wide ultra-high aspect-ratio bulk-Si FinFETs V Jovanović, M Poljak, T Suligoj, Y Civale, LK Nanver 2009 Device Research Conference, 261-262, 2009 | 4 | 2009 |
Tomislav SuligojProfessor of Electronics, University of ZagrebVerified email at fer.hr
