| Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors K Nandan, B Ghosh, A Agarwal, S Bhowmick, YS Chauhan IEEE Transactions on Electron Devices 69 (1), 406-413, 2021 | 33 | 2021 |
| Performance Investigation of p-FETs Based on Highly Air-Stable Monolayer Pentagonal PdSe2 K Nandan, A Agarwal, S Bhowmick, YS Chauhan IEEE Transactions on Electron Devices 68 (12), 6551-6557, 2021 | 8 | 2021 |
| Compact Modeling of Multi-Layered MoS2 FETs Including Negative Capacitance Effect K Nandan, C Yadav, P Rastogi, A Toral-Lopez, A Marin-Sanchez, ... IEEE Journal of the Electron Devices Society 8, 1177-1183, 2020 | 7 | 2020 |
| Designing Power-Efficient Transistors Using Narrow-Bandwidth Materials from the (; ; ) Monolayer Series K Nandan, S Bhowmick, YS Chauhan, A Agarwal Physical Review Applied 19 (6), 064058, 2023 | 5 | 2023 |
| Compact Modeling of Surface Potential and Drain Current in Multi-layered MoS2 FETs K Nandan, C Yadav, P Rastogi, A Toral-Lopez, A Marin-Sanchez, ... 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | 4 | 2020 |
| Di-Metal Chalcogenides: A New Family of Promising 2-D Semiconductors for High-Performance Transistors A Naseer, K Nandan, A Agarwal, S Bhowmick, YS Chauhan IEEE Transactions on Electron Devices 70 (5), 2445-2452, 2023 | 1 | 2023 |
| Field-Effect Transistors Based on Two-dimensional Materials K Nandan, A Naseer, YS Chauhan Transactions of the Indian National Academy of Engineering 8 (1), 1-14, 2023 | 1 | 2023 |
| Two-dimensional semiconductors based Field-Effect Transistors: Review of Major Milestones and Challenges K Nandan, A Agarwal, S Bhowmick, YS Chauhan Frontiers in Electronics 4, 1277927, 2023 | 1 | 2023 |
| Designing power efficient transistors using narrow bandwidth materials from the MA2Z4 monolayer series K Nandan, S Bhowmick, YS Chauhan, A Agarwal arXiv preprint arXiv:2211.09540, 2022 | 1 | 2022 |
| PdSe2 based field-effect transistors K Nandan, A Agarwal, S Bhowmick, YS Chauhan arXiv preprint arXiv:2201.03493, 2022 | 1 | 2022 |
| Performance Evaluation of Monolayer ZrS Transistors for Next-Generation Computing A Naseer, K Nandan, A Agarwal, S Bhowmick, YS Chauhan IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Extremely Scaled Silicon Nanosheet Transistors K Nandan https://www.researchgate.net/publication …, 2023 | | 2023 |
| A Physics-Based Compact Model for Silicon Cold-Source Transistors A Kar, K Nandan, YS Chauhan IEEE Transactions on Electron Devices 70 (4), 1580-1588, 2023 | | 2023 |
| Extremely Scaled Silicon Nanosheet Transistors K Nandan, A Agarwal, S Bhowmick, YS Chauhan 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-5, 2022 | | 2022 |
| Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for Transistors K Nandan, B Ghosh, A Agarwal, S Bhowmick, YS Chauhan arXiv preprint arXiv:2201.10278, 2022 | | 2022 |
Yogesh S. ChauhanFellow IEEE, FNAE, Professor-IIT KanpurPotvrđena adresa e-pošte na iitk.ac.in
