| The optoelectronic role of chlorine in CH3NH3PbI3(Cl)-based perovskite solar cells Q Chen, H Zhou, Y Fang, AZ Stieg, TB Song, HH Wang, X Xu, Y Liu, S Lu, ... Nature communications 6 (1), 7269, 2015 | 502 | 2015 |
| Thermal conductivity of symmetrically strained Si/Ge superlattices T Borca-Tasciuc, W Liu, J Liu, T Zeng, DW Song, CD Moore, G Chen, ... Superlattices and microstructures 28 (3), 199-206, 2000 | 361 | 2000 |
| Surface ligand management for stable FAPbI3 perovskite quantum dot solar cells J Xue, JW Lee, Z Dai, R Wang, S Nuryyeva, ME Liao, SY Chang, L Meng, ... Joule 2 (9), 1866-1878, 2018 | 180 | 2018 |
| Synthesis of Si1−yCy alloys by molecular beam epitaxy SS Iyer, K Eberl, MS Goorsky, FK LeGoues, JC Tsang, F Cardone Applied physics letters 60 (3), 356-358, 1992 | 176 | 1992 |
| Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy TJ De Lyon, JM Woodall, MS Goorsky, PD Kirchner Applied physics letters 56 (11), 1040-1042, 1990 | 164 | 1990 |
| Towards van der Waals epitaxial growth of GaAs on Si using a graphene buffer layer Y Alaskar, S Arafin, D Wickramaratne, MA Zurbuchen, L He, J McKay, ... Advanced Functional Materials 24 (42), 6629-6638, 2014 | 155 | 2014 |
| Ultrahigh and broad spectral photodetectivity of an organic–inorganic hybrid phototransistor for flexible electronics YS Rim, Y Yang, SH Bae, H Chen, C Li, MS Goorsky, Y Yang Advanced Materials 27 (43), 6885-6891, 2015 | 151 | 2015 |
| Thermal conductivity of nanoporous bismuth thin films DW Song, WN Shen, B Dunn, CD Moore, MS Goorsky, T Radetic, ... Applied Physics Letters 84 (11), 1883-1885, 2004 | 113 | 2004 |
| Study of impurity segregation, crystallinity, and detector performance of melt-grown cadmium zinc telluride crystals M Schieber, TE Schlesinger, RB James, H Hermon, H Yoon, M Goorsky Journal of Crystal Growth 237, 2082-2090, 2002 | 110 | 2002 |
| Low thermal boundary resistance interfaces for GaN-on-diamond devices L Yates, J Anderson, X Gu, C Lee, T Bai, M Mecklenburg, T Aoki, ... ACS applied materials & interfaces 10 (28), 24302-24309, 2018 | 109 | 2018 |
| Experimental observation of high intrinsic thermal conductivity of AlN Z Cheng, YR Koh, A Mamun, J Shi, T Bai, K Huynh, L Yates, Z Liu, R Li, ... Physical Review Materials 4 (4), 044602, 2020 | 106 | 2020 |
| Surface reconstruction of halide perovskites during post-treatment S Tan, T Huang, I Yavuz, R Wang, MH Weber, Y Zhao, M Abdelsamie, ... Journal of the American Chemical Society 143 (18), 6781-6786, 2021 | 96 | 2021 |
| Pulsed laser deposition of epitaxial AlN, GaN, and InN thin films on sapphire (0001) D Feiler, RS Williams, AA Talin, H Yoon, MS Goorsky Journal of crystal growth 171 (1-2), 12-20, 1997 | 95 | 1997 |
| A surfactant-mediated relaxed graded layer with a very low threading dislocation density and smooth surface JL Liu, CD Moore, GD U’ren, YH Luo, Y Lu, G Jin, SG Thomas, ... Applied Physics Letters 75 (11), 1586-1588, 1999 | 94 | 1999 |
| Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon L Gao, RL Woo, B Liang, M Pozuelo, S Prikhodko, M Jackson, N Goel, ... Nano letters 9 (6), 2223-2228, 2009 | 92 | 2009 |
| Heterogeneous integration at fine pitch (≤ 10 µm) using thermal compression bonding AA Bajwa, SC Jangam, S Pal, N Marathe, T Bai, T Fukushima, M Goorsky, ... 2017 IEEE 67th electronic components and technology conference (ECTC), 1276-1284, 2017 | 87 | 2017 |
| Material properties of large-volume cadmium zinc telluride crystals and their relationship to nuclear detector performance RB James, B Brunett, J Heffelfinger, J Van Scyoc, J Lund, FP Doty, ... Journal of electronic materials 27, 788-799, 1998 | 86 | 1998 |
| Chemical mechanical polishing of GaN S Hayashi, T Koga, MS Goorsky Journal of The Electrochemical Society 155 (2), H113, 2007 | 84 | 2007 |
| Direct visualization of thermal conductivity suppression due to enhanced phonon scattering near individual grain boundaries A Sood, R Cheaito, T Bai, H Kwon, Y Wang, C Li, L Yates, T Bougher, ... Nano letters 18 (6), 3466-3472, 2018 | 83 | 2018 |
| The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire SD Hersee, J Ramer, K Zheng, C Kranenberg, K Malloy, M Banas, ... Journal of electronic materials 24, 1519-1523, 1995 | 83 | 1995 |
Kang L. WangElectrical Engineering DepartmentPotvrđena adresa e-pošte na ee.ucla.edu
