| Mid-infrared InAs/InAsSb superlattice nBn photodetector monolithically integrated onto silicon E Delli, V Letka, PD Hodgson, E Repiso, JP Hayton, AP Craig, Q Lu, ... Acs Photonics 6 (2), 538-544, 2019 | 69 | 2019 |
| The development of room temperature LEDs and lasers for the mid‐infrared spectral range A Krier, M Yin, V Smirnov, P Batty, PJ Carrington, V Solovev, V Sherstnev physica status solidi (a) 205 (1), 129-143, 2008 | 61 | 2008 |
| Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes PJ Carrington, VA Solov'ev, Q Zhuang, A Krier, SV Ivanov Applied Physics Letters 93 (9), 2008 | 59 | 2008 |
| Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells PJ Carrington, AS Mahajumi, MC Wagener, JR Botha, Q Zhuang, A Krier Physica B: Condensed Matter 407 (10), 1493-1496, 2012 | 52 | 2012 |
| InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 C Q Lu, X Zhou, A Krysa, A Marshall, P Carrington, CH Tan, A Krier Solar Energy Materials and Solar Cells 179, 334-338, 2018 | 51 | 2018 |
| Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells PJ Carrington, MC Wagener, JR Botha, AM Sánchez, A Krier Applied Physics Letters 101 (23), 2012 | 40 | 2012 |
| Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes KJ Cheetham, PJ Carrington, NB Cook, A Krier Solar energy materials and solar cells 95 (2), 534-537, 2011 | 40 | 2011 |
| Mid-Infrared GaInSb/AlGaInSb Quantum Well Laser Diodes Grown on GaAs GR Nash Terahertz and Mid Infrared Radiation: Generation, Detection and Applications …, 2011 | 34 | 2011 |
| Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures PD Hodgson, RJ Young, M Ahmad Kamarudin, PJ Carrington, A Krier, ... Journal of Applied Physics 114 (7), 2013 | 31 | 2013 |
| Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes PJ Carrington, Q Zhuang, M Yin, A Krier Semiconductor Science and Technology 24 (7), 075001, 2009 | 29 | 2009 |
| Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K GR Nash, SJB Przeslak, SJ Smith, G De Valicourt, AD Andreev, ... Applied Physics Letters 94 (9), 2009 | 26 | 2009 |
| Open‐circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration H Fujita, PJ Carrington, MC Wagener, JR Botha, ARJ Marshall, J James, ... Progress in Photovoltaics: Research and Applications 23 (12), 1896-1900, 2015 | 24 | 2015 |
| Growth optimization of self-organized InSb/InAs quantum dots Q Zhuang, PJ Carrington, A Krier Journal of Physics D: Applied Physics 41 (23), 232003, 2008 | 23 | 2008 |
| Long-wavelength photoluminescence from stacked layers of high-quality type-II GaSb/GaAs quantum rings PJ Carrington, RJ Young, PD Hodgson, AM Sanchez, M Hayne, A Krier Crystal growth & design 13 (3), 1226-1230, 2013 | 22 | 2013 |
| Development of dilute nitride materials for mid-infrared diode lasers A Krier, M De la Mare, PJ Carrington, M Thompson, Q Zhuang, A Patanè, ... Semiconductor Science and Technology 27 (9), 094009, 2012 | 22 | 2012 |
| Mid-infrared resonant cavity light emitting diodes operating at 4.5 µm FA Al-Saymari, AP Craig, Q Lu, ARJ Marshall, PJ Carrington, A Krier Optics Express 28 (16), 23338-23353, 2020 | 21 | 2020 |
| Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer Q Lu, R Beanland, D Montesdeoca, PJ Carrington, A Marshall, A Krier Solar Energy Materials and Solar Cells 191, 406-412, 2019 | 20 | 2019 |
| Characterization of 6.1 Å III–V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy AP Craig, PJ Carrington, H Liu, ARJ Marshall Journal of Crystal Growth 435, 56-61, 2016 | 20 | 2016 |
| Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells MC Wagener, PJ Carrington, JR Botha, A Krier Applied Physics Letters 103 (6), 2013 | 20 | 2013 |
| Mid-infrared type-II InAs/InAsSb quantum wells integrated on silicon E Delli, PD Hodgson, M Bentley, E Repiso, AP Craig, Q Lu, R Beanland, ... Applied Physics Letters 117 (13), 2020 | 19 | 2020 |
