Kesaria Manoj

Citirano

	Sve	Od 2019.
Citati	530	272
H-indeks	14	9
i10-indeks	18	9

201120122013201420152016201720182019202020212022202320242 18 14 38 47 32 49 57 38 54 34 59 65 22

Javni pristup

Prikaži sve

21 članak

2 članka

dostupno

nije dostupno

Na temelju uvjeta financiranja

Suautori

Shivaprasad S MProfessor Jawaharlal Nehru Centre for Advanced Scientific ResearchPotvrđena adresa e-pošte na jncasr.ac.in
Anyebe EzekielSchool of Physics and Astronomy, Cardiff University, Cardiff, UKPotvrđena adresa e-pošte na cardiff.ac.uk
Qiandong ZhuangPhysics Department, Lancaster UniversityPotvrđena adresa e-pošte na lancaster.ac.uk
QI LULancaster University, UKPotvrđena adresa e-pošte na lancaster.ac.uk
Subhabrata DharIndian Institute of Technology BombayPotvrđena adresa e-pošte na phy.iitb.ac.in
H. P. BhaskerCMP Degree College, University of AllahabadPotvrđena adresa e-pošte na cmpcollege.ac.in
Anirban SainProfessor, Physics Dept., IIT Bombay, India.Potvrđena adresa e-pošte na phy.iitb.ac.in
Chee Hing TanThe University Of SheffieldPotvrđena adresa e-pošte na sheffield.ac.uk
Umesh V WaghmareJNCASRPotvrđena adresa e-pošte na jncasr.ac.in
Mohit TutejaNational Institute of Standards and Technology, MDPotvrđena adresa e-pošte na umd.edu
Wyn MeredithCompound Semiconductor CentrePotvrđena adresa e-pošte na iqep.com
Jay GhatakJawaharlal Nehru Center for Advanced Scientific Research, BangalorePotvrđena adresa e-pošte na jncasr.ac.in
Laurence EavesUniversity of NottinghamPotvrđena adresa e-pošte na nottingham.ac.uk
LUKE MAWSTUniversity of WisconsinPotvrđena adresa e-pošte na wisc.edu
Zakhar R. KudrynskyiNottingham Research Fellow, Faculty of Engineering, University of NottinghamPotvrđena adresa e-pošte na nottingham.ac.uk
Ranjan DattaProfessorPotvrđena adresa e-pošte na jncasr.ac.in
Giorgio PettinariSenior Researcher at Institute for Photonics and Nanotechnologies (CNR-IFN)Potvrđena adresa e-pošte na cnr.it
DILEEP KRISHNANApplication Scientist, Thermofisher ScientificPotvrđena adresa e-pošte na thermofisher.com
Loukya BoddapatiInternational Iberian Nanotechnology LaboratoryPotvrđena adresa e-pošte na inl.int
Devendra Singh NegiIndian Institute of Technology JodhpurPotvrđena adresa e-pošte na iitj.ac.in

Prati

Kesaria Manoj

Cardiff University

Potvrđena adresa e-pošte na cardiff.ac.uk

MBE growth of III-Nitride III-As/Sb dilute N and Bi optoelctonics Surface Physics


Naslov Poredaj po navodima Poredaj po godini Poredaj po naslovu	Citirano Citirano	Godina
Evidence for dislocation induced spontaneous formation of GaN nanowalls and nanocolumns on bare C-plane sapphire M Kesaria, S Shetty, SM Shivaprasad Crystal growth & design 11 (11), 4900-4903, 2011	59	2011
Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3 (0001) M Kesaria, SM Shivaprasad Applied Physics Letters 99 (14), 2011	41	2011
High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy HP Bhasker, S Dhar, A Sain, M Kesaria, SM Shivaprasad Applied Physics Letters 101 (13), 2012	39	2012
Emerging type‐II superlattices of InAs/InAsSb and InAs/GaSb for mid‐wavelength infrared photodetectors DO Alshahrani, M Kesaria, EA Anyebe, V Srivastava, DL Huffaker Advanced photonics research 3 (2), 2100094, 2022	37	2022
Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si (111) surface P Kumar, M Tuteja, M Kesaria, UV Waghmare, SM Shivaprasad Applied Physics Letters 101 (13), 2012	30	2012
InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs JA Keen, D Lane, M Kesaria, ARJ Marshall, A Krier Journal of Physics D: Applied Physics 51 (7), 075103, 2018	27	2018
InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers Q Lu, Q Zhuang, A Marshall, M Kesaria, R Beanland, A Krier Semiconductor Science and Technology 29 (7), 075011, 2014	26	2014
Spontaneous formation of GaN nanostructures by molecular beam epitaxy M Kesaria, S Shetty, SM Shivaprasad Journal of crystal growth 326 (1), 191-194, 2011	23	2011
Recent trends in 8–14 μm type-II superlattice infrared detectors D Kwan, M Kesaria, EA Anyebe, D Huffaker Infrared Physics & Technology 116, 103756, 2021	22	2021
Role of substrate temperature in the pulsed laser deposition of zirconium oxide thin film J Mittra, GJ Abraham, M Kesaria, S Bahl, A Gupta, SM Shivaprasad, ... Materials Science Forum 710, 757-761, 2012	22	2012
Low bandgap mid-infrared thermophotovoltaic arrays based on InAs A Krier, M Yin, ARJ Marshall, M Kesaria, SE Krier, S McDougall, ... Infrared Physics & Technology 73, 126-129, 2015	18	2015
Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology V Thakur, M Kesaria, SM Shivaprasad Solid state communications 171, 8-13, 2013	17	2013
The origin of shape, orientation, and structure of Spontaneously formed Wurtzite GaN nanorods on cubic Si (001) Surface S Shetty, M Kesaria, J Ghatak, SM Shivaprasad Crystal growth & design 13 (6), 2407-2412, 2013	17	2013
Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared JA Keen, E Repiso, Q Lu, M Kesaria, ARJ Marshall, A Krier Infrared Physics & Technology 93, 375-380, 2018	15	2018
Highly-mismatched InAs/InSe heterojunction diodes ZDKAP A. V. Velichko, Z. R. Kudrynskyi, D. M. Di Paola, O. Makarovsky, M ... Applied Physics Letters 109, 182115, 2016	11	2016
Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP R Wheatley, M Kesaria, LJ Mawst, JD Kirch, TF Kuech, A Marshall, ... Applied Physics Letters 106 (23), 2015	11	2015
Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy HP Bhasker, V Thakur, M Kesaria, SM Shivaprasad, S Dhar AIP Conference Proceedings 1583 (1), 252-258, 2014	11	2014
Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire M Kesaria, S Shetty, PI Cohen, SM Shivaprasad Materials Research Bulletin 46 (11), 1811-1813, 2011	10	2011
Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene E Anyebe, M Kesaria Nano select, 2020	9	2020
Effect of N2* and N on GaN nanocolumns grown on Si (111) by molecular beam epitaxy A Debnath, JS Gandhi, M Kesaria, R Pillai, D Starikov, A Bensaoula Journal of Applied Physics 119 (10), 2016	9	2016

Sustav trenutno ne može provesti ovu radnju. Pokušajte ponovo kasnije.

Članci 1–20

Godišnji broj citata

Dvostruki navodi

Spojeni navodi

Dodavanje suautoraSuautori

Prati

Citirano

Suautori