Tomislav Suligoj
Tomislav Suligoj
Professor of Electronics, University of Zagreb
Verified email at fer.hr - Homepage
TitleCited byYear
Assessment of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs using physics-based modeling
M Poljak, V Jovanovic, D Grgec, T Suligoj
IEEE transactions on electron devices 59 (6), 1636-1643, 2012
542012
Improving bulk FinFET DC performance in comparison to SOI FinFET
M Poljak, V Jovanović, T Suligoj
Microelectronic Engineering 86 (10), 2078-2085, 2009
392009
Analytical models of front-and back-gate potential distribution and threshold voltage for recessed source/drain UTB SOI MOSFETs
B Sviličić, V Jovanović, T Suligoj
Solid-State Electronics 53 (5), 540-547, 2009
362009
SOI vs. bulk FinFET: body doping and corner effects influence on device characteristics
M Poljak, V Jovanovic, T Suligoj
MELECON 2008-The 14th IEEE Mediterranean Electrotechnical Conference, 425-430, 2008
302008
Horizontal current bipolar transistor with a single polysilicon region for improved high-frequency performance of BiCMOS ICs
T Suligoj, M Koricic, H Mochizuki, S Morita, K Shinomura, H Imai
IEEE Electron Device Letters 31 (6), 534-536, 2010
262010
Suppression of corner effects in wide-channel triple-gate bulk FinFETs
M Poljak, V Jovanović, T Suligoj
Microelectronic Engineering 87 (2), 192-199, 2010
242010
Ultra-high aspect-ratio FinFET technology
V Jovanović, T Suligoj, M Poljak, Y Civale, LK Nanver
Solid-state electronics 54 (9), 870-876, 2010
202010
Horizontal current bipolar transistor and fabrication method
T Suligoj, P Biljanovic, KL Wang
US Patent 7,038,249, 2006
202006
Influence of edge defects, vacancies, and potential fluctuations on transport properties of extremely scaled graphene nanoribbons
M Poljak, EB Song, M Wang, T Suligoj, KL Wang
IEEE transactions on electron devices 59 (12), 3231-3238, 2012
182012
Technological constrains of bulk FinFET structure in comparison with SOI FinFET
M Poljak, V Jovanovic, T Suligoj
2007 International Semiconductor Device Research Symposium, 1-2, 2007
182007
Double-emitter reduced-surface-field horizontal current bipolar transistor with 36 V Breakdown integrated in BiCMOS at Zero Cost
M Koričić, J Žilak, T Suligoj
IEEE Electron Device Letters 36 (2), 90-92, 2014
172014
Fabrication of horizontal current bipolar transistor (HCBT)
T Suligoj, M Koricic, P Biljanovic, KL Wang
IEEE Transactions on Electron Devices 50 (7), 1645-1651, 2003
172003
Influence of substrate type and quality on carrier mobility in graphene nanoribbons
M Poljak, T Suligoj, KL Wang
Journal of Applied Physics 114 (5), 053701, 2013
162013
Collector region design and optimization in horizontal current bipolar transistor (HCBT)
T Suligoj, M Koričić, H Mochizuki, S Morita, K Shinomura, H Imai
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 212-215, 2010
162010
Horizontal current bipolar transistor (HCBT) process variations for future RF BiCMOS applications
T Suligoj, JKO Sin, KL Wang
IEEE transactions on electron devices 52 (7), 1392-1398, 2005
152005
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications
M Poljak, V Jovanović, T Suligoj
Solid-state electronics 65, 130-138, 2011
142011
Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects
M Poljak, T Suligoj
Nano Research 9 (6), 1723-1734, 2016
132016
Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbons
M Poljak, M Wang, EB Song, T Suligoj, KL Wang
Solid-state electronics 84, 103-111, 2013
132013
Horizontal current bipolar transistor (HCBT): A new concept of silicon bipolar transistor technology
P Biljanovic, T Suligoj
IEEE Transactions on Electron Devices 48 (11), 2551-2554, 2001
132001
Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons
M Poljak, KL Wang, T Suligoj
Solid-State Electronics 108, 67-74, 2015
112015
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Articles 1–20