Jaehyun Lee
Jaehyun Lee
Potvrđena adresa e-pošte na
Analysis of drain-induced barrier rising in short-channel negative-capacitance FETs and its applications
J Seo, J Lee, M Shin
IEEE Transactions on Electron Devices 64 (4), 1793-1798, 2017
Density functional theory based simulations of silicon nanowire field effect transistors
M Shin, WJ Jeong, J Lee
Journal of Applied Physics 119 (15), 154505, 2016
Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform
S Berrada, H Carrillo-Nunez, J Lee, C Medina-Bailon, T Dutta, O Badami, ...
Journal of Computational Electronics 19, 1031-1046, 2020
Simulation of the impact of ionized impurity scattering on the total mobility in Si nanowire transistors
T Sadi, C Medina-Bailon, M Nedjalkov, J Lee, O Badami, S Berrada, ...
Materials 12 (1), 124, 2019
NESS: new flexible nano-electronic simulation software
S Berrada, T Dutta, H Carrillo-Nunez, M Duan, F Adamu-Lema, J Lee, ...
2018 International Conference on Simulation of Semiconductor Processes and …, 2018
Variability study of MWCNT local interconnects considering defects and contact resistances-Part I: pristine MWCNT
R Chen, J Liang, J Lee, VP Georgiev, R Ramos, H Okuno, D Kalita, ...
IEEE Transactions on Electron Devices, 2018
p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge-and Si-Channel Devices
W Choi, J Lee, M Shin
Electron Devices, IEEE Transactions on, 1-1, 2014
Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors
O Badami, C Medina-Bailon, S Berrada, H Carrillo-Nunez, J Lee, ...
Applied Sciences 9 (9), 1895, 2019
Mobility of circular and elliptical Si nanowire transistors using a multi-subband 1D formalism
C Medina-Bailon, T Sadi, M Nedjalkov, H Carrillo-Nunez, J Lee, ...
IEEE Electron Device Letters 40 (10), 1571-1574, 2019
Random dopant-induced variability in Si-InAs nanowire tunnel FETs: A quantum transport simulation study
H Carrillo-Nuñez, J Lee, S Berrada, C Medina-Bailón, F Adamu-Lema, ...
IEEE Electron Device Letters 39 (9), 1473-1476, 2018
Progress on carbon nanotube BEOL interconnects
B Uhlig, J Liang, J Lee, R Ramos, A Dhavamani, N Nagy, J Dijon, ...
2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), 937-942, 2018
A worst-case analysis of trap-assisted tunneling leakage in DRAM using a machine learning approach
J Lee, P Asenov, M Aldegunde, SM Amoroso, AR Brown, V Moroz
IEEE Electron Device Letters 42 (2), 156-159, 2020
Investigation of Pt-salt-doped-standalone-multiwall carbon nanotubes for on-chip interconnect applications
J Liang, R Chen, R Ramos, J Lee, H Okuno, D Kalita, V Georgiev, ...
IEEE Transactions on Electron Devices 66 (5), 2346-2352, 2019
Understanding electromigration in Cu-CNT composite interconnects: A multiscale electrothermal simulation study
J Lee, S Berrada, F Adamu-Lema, N Nagy, VP Georgiev, T Sadi, J Liang, ...
IEEE Transactions on Electron Devices 65 (9), 3884-3892, 2018
Negative capacitance logic device, clock generator including the same and method of operating clock generator
MC Shin, JH Lee, DH Kang, JB Seo, WJ Jeong
US Patent 9,484,924, 2016
A physics-based investigation of Pt-salt doped carbon nanotubes for local interconnects
J Liang, R Ramos, J Dijon, H Okuno, D Kalita, D Renaud, J Lee, ...
2017 IEEE International Electron Devices Meeting (IEDM), 35.5. 1-35.5. 4, 2017
DTCO launches Moore’s law over the feature scaling wall
V Moroz, XW Lin, P Asenov, D Sherlekar, M Choi, L Sponton, LS Melvin, ...
2020 IEEE International Electron Devices Meeting (IEDM), 41.1. 1-41.1. 4, 2020
Atomistic-to circuit-level modeling of doped SWCNT for on-chip interconnects
J Liang, J Lee, S Berrada, VP Georgiev, R Pandey, R Chen, A Asenov, ...
IEEE Transactions on Nanotechnology 17 (6), 1084-1088, 2018
Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation
C Medina-Bailon, H Carrillo-Nunez, J Lee, C Sampedro, JL Padilla, ...
Micromachines 11 (2), 204, 2020
Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs
J Lee, O Badami, H Carrillo-Nuñez, S Berrada, C Medina-Bailon, T Dutta, ...
Micromachines 9 (12), 643, 2018
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